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參數資料
型號: 2SD1964Q
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: 15 A, 80 V, NPN, Si, POWER TRANSISTOR, TO-220AB
封裝: SC-67, TO-220F-A1, FULL PACK-3
文件頁數: 1/4頁
文件大小: 251K
代理商: 2SD1964Q
Power Transistors
1
Publication date: September 2003
SJD00236BED
2SD1964
Silicon NPN epitaxial planar type
For power switching
■ Features
Low collector-emitter saturation voltage V
CE(sat)
Satisfactory linearity of forward current transfer ratio h
FE
Large collector current I
C
Full-pack package which can be installed to the heat sink with one screw.
■ Absolute Maximum Ratings T
C
= 25°C
■ Electrical Characteristics T
C
= 25°C ± 3°C
Unit: mm
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector-emitter voltage (Base open)
VCEO
IC = 10 mA, IB = 0
80
V
Collector-base cutoff current (Emitter open)
ICBO
VCB = 100 V, IE = 010
A
Emitter-base cutoff current (Collector open)
IEBO
VEB = 5 V, IC = 050
A
Forward current transfer ratio
hFE1
VCE
= 2 V, I
C
= 0.1 A
45
hFE2 *
VCE = 2 V, IC = 3 A
90
260
hFE3
VCE = 2 V, IC = 8 A
30
Collector-emitter saturation voltage
VCE(sat)1
IC
= 7 A, I
B
= 0.35 A
0.5
V
VCE(sat)2
IC = 15 A, IB = 1.5 A
1.5
Base-emitter saturation voltage
VBE(sat)1
IC = 7 A, IB = 0.35 A
1.5
V
VBE(sat)2
IC
= 15 A, I
B
= 1.5 A
2.5
Transition frequency
fT
VCE = 10 V, IC = 0.5 A, f = 1 MHz
20
MHz
Turn-on time
ton
IC = 7 A, IB1 = 0.7 A, IB2 = 0.7 A,
0.5
s
Storage time
tstg
VCC
= 50 V
2.0
s
Fall time
tf
0.2
s
Parameter
Symbol
Rating
Unit
Collector-base voltage (Emitter open)
VCBO
130
V
Collector-emitter voltage (Base open)
VCEO
80
V
Emitter-base voltage (Collector open)
VEBO
7V
Collector current
IC
15
A
Peak collector current
ICP
25
A
Collector power
PC
50
W
dissipation
Ta = 25°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
R
Q
P
hFE2
60 to 120
90 to 180
130 to 260
10.0±0.2
5.5±0.2
7.5
±
0.2
16.7
±
0.3
0.7
±
0.1
14.0
±
0.5
Solder
Dip
(4.0)
0.5
+0.2
–0.1
1.4±0.1
1.3±0.2
0.8±0.1
2.54±0.3
5.08±0.5
2
13
2.7±0.2
4.2±0.2
4.2
±
0.2
φ 3.1±0.1
1: Base
2: Collector
3: Emitter
EIAJ: SC-67
TO-220F-A1 Package
This product complies with the RoHS Directive (EU 2002/95/EC).
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
相關PDF資料
PDF描述
2SD1975S 15 A, 180 V, NPN, Si, POWER TRANSISTOR
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相關代理商/技術參數
參數描述
2SD1979 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR
2SD19790SL 功能描述:TRANS NPN 20VCEO 300MA SMINI-3P RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SD1979GSL 功能描述:TRANS NPN 20VCEO 300MA SMINI-3 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)(最大):1A 電壓 - 集電極發射極擊穿(最大):30V Ib、Ic條件下的Vce飽和度(最大):200mV @ 100mA,1A 電流 - 集電極截止(最大):100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA,5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3,SC-59,SOT-23-3 供應商設備封裝:SOT-23-3(TO-236) 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR
2SD1980TL 功能描述:達林頓晶體管 D-PAK;BCE NPN;DARL SMT RoHS:否 制造商:Texas Instruments 配置:Octal 晶體管極性:NPN 集電極—發射極最大電壓 VCEO:50 V 發射極 - 基極電壓 VEBO: 集電極—基極電壓 VCBO: 最大直流電集電極電流:0.5 A 最大集電極截止電流: 功率耗散: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOIC-18 封裝:Reel
2SD1980TLR 制造商:Rohm 功能描述:NPN_[g 100V 2A 1000`10000 DPak, SC63,TO252 Cut Tape
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