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參數資料
| 型號： | 2SD2064 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN triple diffusion planar type(For high power amplification) |
| 中文描述： | 6 A, 120 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | SC-92, TOP-3F-A1, FULL PACK-3 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 51K |
| 代理商： | 2SD2064 |
1
Power Transistors
2SD2064
Silicon NPN triple diffusion planar type
For high power amplification
Complementary to 2SB1371
I
Features
G
Satisfactory foward current transfer ratio h
FE
vs. collector cur-
rent I
C
characteristics
G
Wide area of safe operation (ASO)
G
High transition frequency f
T
G
Optimum for the output stage of a HiFi audio amplifier
G
Full-pack package which can be installed to the heat sink with
one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C
T
j
T
stg
Ratings
120
120
5
10
6
70
3
150
–55 to +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
I
EBO
h
FE1
h
FE2*
h
FE3
V
BE
V
CE(sat)
f
T
C
ob
Conditions
V
CB
= 120V, I
E
= 0
V
EB
= 3V, I
C
= 0
V
CE
= 5V, I
C
= 20mA
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 4A
V
CE
= 5V, I
C
= 4A
I
C
= 4A, I
B
= 0.4A
V
CE
= 5V, I
C
= 0.5A, f = 1MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
20
60
20
typ
20
80
max
50
50
200
1.8
2.0
Unit
μ
A
μ
A
V
V
MHz
pF
*
h
FE2
Rank classification
Rank
Q
S
P
h
FE2
60 to 120
80 to 160
100 to 200
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
TOP–3 Full Pack Package(a)
15.0
±
0.3
11.0
±
0.2
2
±
0
1
±
0
1
S
3
0
1
±
0
5.0
±
0.2
3.2
10.9
±
0.5
5.45
±
0.3
3
2
1
1.1
±
0.1
2.0
±
0.2
0.6
±
0.2
2.0
±
0.1
φ
3.2
±
0.1
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD20640S | 功能描述:TRANS NPN 120VCEO 6A TOP-3F RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2064P | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 6A I(C) | TO-247VAR |
| 2SD2064Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 6A I(C) | TO-247VAR |
| 2SD2064S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 6A I(C) | TO-247VAR |
| 2SD2065 | 制造商:ISC 制造商全稱:Inchange Semiconductor Company Limited 功能描述:Silicon NPN Power Transistor |
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