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參數資料
| 型號： | 2SD2141 |
| 廠商： | SANKEN ELECTRIC CO LTD |
| 元件分類： | 功率晶體管 |
| 英文描述： | Silicon NPN Triple Diffused Planar Transistor(Darlington)(硅NPN三倍擴散平面達林頓晶體管) |
| 中文描述： | 6 A, 330 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220F, FULL PACK-3 |
| 文件頁數： | 1/1頁 |
| 文件大?。?/td> | 23K |
| 代理商： | 2SD2141 |
147
2S D2141
I
C
–V
CE
Characteristics
(Typical)
h
FE
–I
C
Characteristics
(Typical)
θ
j-a
–t
Characteristics
V
CE
(sat)–I
B
Characteristics
(Typical)
Pc–Ta Derating
0
0
5
10
2
4
6
Collector-Emitter Voltage V
CE
(V)
C
C
(
Safe Operating Area
(Single Pulse)
150mA
I
B
=1mA
2mA
4mA
18mA
20mA
120mA
90mA 60mA
0
3
2
1
0.2
1
0.5
10
5
200
100
50
Base Current I
B
(mA)
C
C
(
1A
3A
5A
I
C
=7A
0.02
0.1
1
0.5
10
5
5000
10000
1000
500
100
10
50
Collector Current I
C
(A)
D
F
(V
CE
=2V)
Typ
0.1
1
5
0.5
1
10
100
1000
Time t(ms)
T
θ
j
(
1s
1m
100m
50
10
5
1
100
500
0.01
0.05
0.1
1
0.5
10
20
5
Collector-Emitter Voltage V
CE
(V)
C
C
(
DC
Without Heatsink
Natural Cooling
40
30
20
10
2
00
25
50
75
100
125
150
Ambient Temperature Ta(C)
M
C
(
WthIninteheasnk
Without Heatsink
50x50x2
100x100x2
150x150x2
I
C
–V
BE
Temperature
Characteristics
(Typical)
0
10
5
0
2.0
2.4
1.0
Base-Emittor Voltage V
BE
(V)
C
C
(
(V
CE
=4V)
15CCs em)
–CaTp
h
FE
–I
C
Temperature
Characteristics
(Typical)
0.02
0.1
1.0
5
0.5
10
5000
10000
1000
500
100
50
20
Collector Current I
C
(A)
D
F
(V
CE
=2V)
125C
–55C
25C
f
T
–I
E
Characteristics
(Typical)
(V
CE
=12V)
Emitter Current I
E
(A)
0.05
0
01
0.5
1
5
20
10
30
40
C
T
(
Z
)
Typ
Natural Cooling
Silicone Grease
Heatsink: Aluminum
in mm
Silicon NPN Triple Diffused Planar Transistor
Application :
Ignitor, Driver for Solenoid and Motor, and General Purpose
Symbol
V
CBO
V
CEO
V
EBO
I
C
I
B
P
C
Tj
T
stg
2SD2141
380±50
380±50
6
6(
Pulse
10)
1
35(Tc=25°C)
150
–55 to +150
Unit
V
V
V
A
A
W
°C
°C
I
Absolute maximum ratings
I
Electrical Characteristics
2SD2141
10
max
20
max
330to430
1500
min
1.5
max
20
typ
95
typ
Unit
μ
A
mA
V
V
MHz
pF
Conditions
V
CB
=330V
V
EB
=6V
I
C
=25mA
V
CE
=2V, I
C
=3A
I
C
=4A, I
B
=20mA
V
CE
=12V, I
E
=–0.5A
V
CB
=10V, f=1MHz
(Ta=25°C)
(Ta=25°C)
Symbol
I
CBO
I
EBO
V
(BR)CEO
h
FE
V
CE
(sat)
f
T
C
OB
External Dimensions
FM20(TO220F)
3.3
±0.2
10.1
±0.2
4
±
1
±
1
8
±
0
±
3
±
2.54
2.54
1.35
±0.15
0.85
+0.2
-0.1
1.35
±0.15
2.2
±0.2
4.2
±0.2
2.8
c0.5
2.4
±0.2
0.45
+0.2
-0.1
B
E
C
a
b
Weight : Approx 2.0g
a. Type No.
b. Lot No.
Built-in Avalanche Diode
for Surge Absorbing
Darlington
B
C
E
(1.5k
)(100
)
Equivalent circuit
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2141_01 | 制造商:SANKEN 制造商全稱:Sanken electric 功能描述:Silicon NPN Triple Diffused Planar Transistor |
| 2SD2142 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic Plastic-Encapsulate Transistor |
| 2SD2142_11 | 制造商:SECOS 制造商全稱:SeCoS Halbleitertechnologie GmbH 功能描述:NPN Plastic-Encapsulate Transistor |
| 2SD2142K | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-gain Amplifier Transistor (32V, 0.3A) |
| 2SD2142K_1 | 制造商:ROHM 制造商全稱:Rohm 功能描述:High-gain Amplifier Transistor (30V, 0.3A) |
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