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參數(shù)資料
| 型號(hào)： | 2SD2161 |
| 廠商： | NEC Corp. |
| 英文描述： | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 中文描述： | NPN硅外延晶體管低頻功率放大器和低速開(kāi)關(guān) |
| 文件頁(yè)數(shù)： | 1/6頁(yè) |
| 文件大小： | 130K |
| 代理商： | 2SD2161 |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D14864EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2161
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
The 2SD2161 is a Darlington power transistor that can directly drive
from the IC output. This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
High h
FE
due to Darlington connection
h
FE
≥
2,000 (V
CE
= 2.0 V, I
C
= 2.0 A)
Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
Conditions
Ratings
100
100
7.0
±
5.0
±
10
Unit
V
V
V
A
A
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
PW
≤
300
μ
s,
duty cycle
≤
10%
Base current (DC)
Total power dissipation
I
B(DC)
P
T
0.5
20
2.0
150
A
W
W
°
C
°
C
T
C
= 25
°
C
T
A
= 25
°
C
Junction temperature
Storage temperature
T
j
T
stg
55 to +150
ORDERING INFORMATION
Ordering Name
2SD2161
Package
Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2161K | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SD2161L | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD2161M | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SD2162 | NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING |
| 2SD2162M | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2161-AZ-K | 制造商:Renesas Electronics Corporation 功能描述: |
| 2SD2161K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SD2161L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SD2161M | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 5A I(C) | TO-220VAR |
| 2SD2162 | 制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:SILICON POWER TRANSISTOR |
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