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參數(shù)資料
| 型號： | 2SD2162M |
| 廠商： | NEC Corp. |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|晶體管|達林頓|叩| 100V的五（巴西）總裁| 8A條一（c）|至220VAR |
| 文件頁數(shù)： | 1/6頁 |
| 文件大?。?/td> | 112K |
| 代理商： | 2SD2162M |
The information in this document is subject to change without notice. Before using this document, please
confirm that this is the latest version.
Not all devices/types available in every country. Please check with local NEC representative for
availability and additional information.
2002
Document No. D14865EJ2V0DS00 (2nd edition)
Date Published April 2002 N CP(K)
Printed in Japan
SILICON POWER TRANSISTOR
2SD2162
NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION)
FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING
DATA SHEET
The 2SD2162 is a Darlington power transistor that can directly drive
from the IC output. This transistor is ideal for motor drivers and
solenoid drivers in such as OA and FA equipment.
In addition, a small resin-molded insulation type package
contributes to high-density mounting and reduction of mounting cost.
FEATURES
High h
FE
due to Darlington connection
h
FE
≥
2,000 (V
CE
= 2.0 V, I
C
= 3.0 A)
Full mold package that does not require an insulating board or
insulation bushing
ABSOLUTE MAXIMUM RATINGS (T
A
= 25
°
C)
Parameter
Symbol
V
CBO
V
CEO
V
EBO
I
C(DC)
I
C(pulse)
Conditions
Ratings
150
100
7.0
+8.0,
5.0
+12,
8.0
Unit
V
V
V
A
A
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current (DC)
Collector current (pulse)
PW
≤
10 ms,
duty cycle
≤
50%
Base current (DC)
Total power dissipation
I
B(DC)
P
T
0.8
25
2.0
150
A
W
W
°
C
°
C
T
C
= 25
°
C
T
A
= 25
°
C
Junction temperature
Storage temperature
T
j
T
stg
55 to +150
ORDERING INFORMATION
Ordering Name
2SD2162
Package
Isolated TO-220
(Isolated TO-220)
INTERNAL EQUIVALENT CIRCUIT
1. Base
2. Collector
3. Emitter
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SD2163 | NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING |
| 2SD2163J | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163K | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SD2163L | TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163M | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2163 | 制造商:NEC 制造商全稱:NEC 功能描述:NPN SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED HIGH-CURRENT SWITCHING |
| 2SD2163-AZ-J | 制造商:Renesas Electronics Corporation 功能描述:Trans Darlington NPN 100V 10A 3-Pin(3+Tab) TO-220 Isolated |
| 2SD2163J | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163K | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
| 2SD2163L | 制造商:NEC 制造商全稱:NEC 功能描述:TRANSISTOR | BJT | DARLINGTON | NPN | 100V V(BR)CEO | 10A I(C) | TO-220 |
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