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參數資料
| 型號： | 2SD2225 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency amplification) |
| 中文描述： | 500 mA, 120 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MT-2-A1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 39K |
| 代理商： | 2SD2225 |
1
Transistor
2SD2225
Silicon NPN epitaxial planer type
For low-frequency amplification
Complementary to 2SB1473
I
Features
G
High collector to emitter voltage V
CEO
of 120V.
G
Optimum for low-frequency driver amplification.
G
Allowing supply with the radial taping.
I
Absolute Maximum Ratings
(Ta=25C)
Unit: mm
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Emitter
2:Collector
3:Base
MT2 Type Package
2.5
±
0.1
4
±
0
1
±
0
2.5
±
0.5
2.5
±
0.5
2
±
0
6.9
±
0.1
1.05
±
0.05
(1.45)
4.0
0.7
0.8
0
0
0
1
1
0.65 max.
0.45
+0.1
0
+
–
3
2
1
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
120
120
5
1
0.5
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector to emitter voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
V
CEO
V
EBO
h
FE1*1
h
FE2
h
FE3
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
I
C
= 0.1mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 150mA
*2
V
CE
= 5V, I
C
= 500mA
*2
V
CE
= 5V, I
C
= 100mA
*2
I
C
= 300mA, I
B
= 30mA
*2
I
C
= 300mA, I
B
= 30mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
*2
V
CB
= 10V, I
E
= 0, f = 1MHz
min
120
5
90
50
100
typ
0.15
0.9
200
11.5
max
330
1
1.2
20
Unit
V
V
V
V
MHz
pF
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
90 ~ 155
130 ~ 220
185 ~ 330
1.2
±
0.1
0.65
0.45
0.1
+
–
Note:In addition to the
lead type shown in
the upper figure, the
type as shown in
the lower figure is
also available.
(HW type)
*2
Pulse measurement
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
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| 2SD2240 | Silicon NPN epitaxial planer type |
| 2SD2240A | Silicon NPN epitaxial planer type |
| 2SD2241 | NPN EPITAXIAL TYPE (SWITCHING APPLICATIONS) |
| 2SD2242 | Silicon NPN triple diffusion planar type Darlington(For power amplification) |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD22250RA | 功能描述:TRANS NPN 120VCEO 500MA MT-2 RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2225Q | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SD2225R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SD2225S | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | BJT | NPN | 120V V(BR)CEO | 500MA I(C) | SC-71 |
| 2SD2226K | 制造商:ROHM 制造商全稱:Rohm 功能描述:General Purpose Transistor (50V, 0.15A) |
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