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參數(shù)資料
型號(hào): 2SD2266
廠商: PANASONIC CORP
元件分類: 功率晶體管
英文描述: Silicon NPN triple diffusion planar type(For power switching)
中文描述: 4 A, 60 V, NPN, Si, POWER TRANSISTOR
封裝: MT4, 3 PIN
文件頁(yè)數(shù): 1/3頁(yè)
文件大小: 53K
代理商: 2SD2266
1
Power Transistors
2SD2266
Silicon NPN triple diffusion planar type
For power switching
I
Features
G
High-speed switching
G
Satisfactory linearity of foward current transfer ratio h
FE
G
Allowing supply with the radial taping
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CEO
V
EBO
I
CP
I
C
I
B
P
C
T
j
T
stg
Ratings
80
60
7
8
4
1
15
2
150
–55 to +150
Unit
V
V
V
A
A
A
W
C
C
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter cutoff current
Collector to emitter voltage
Forward current transfer ratio
Base to emitter voltage
Collector to emitter saturation voltage
Transition frequency
Turn-on time
Storage time
Fall time
Symbol
I
CBO
I
EBO
V
CEO
h
FE1*
h
FE2
V
BE
V
CE(sat)
f
T
t
on
t
stg
t
f
Conditions
V
CB
= 80V, I
E
= 0
V
EB
= 6V, I
C
= 0
I
C
= 25mA, I
B
= 0
V
CE
= 4V, I
C
= 1A
V
CE
= 4V, I
C
= 4A
V
CE
= 4V, I
C
= 4A
I
C
= 4A, I
B
= 0.4A
V
CE
= 12V, I
C
= 0.2A, f = 10MHz
I
C
= 4A, I
B1
= 0.4A, I
B2
= – 0.4A,
V
CC
= 50V
min
60
70
20
typ
80
0.3
1.0
0.2
max
100
100
320
2.0
1.5
Unit
μ
A
μ
A
V
V
V
MHz
μ
s
μ
s
μ
s
*
h
FE1
Rank classification
Rank
Q
P
O
h
FE1
70 to 150
120 to 250
160 to 320
T
C
=25
°
C
Ta=25
°
C
Unit: mm
1:Base
2:Collector
3:Emitter
MT4 Type Package
1.0
10.0
±
0.2
0.55
±
0.1
2.5
±
0.2
2.5
±
0.2
4
±
0
1
±
0
2
±
0
1
±
0
S
5.0
±
0.1
2.25
±
0.2
1.2
±
0.1
0.65
±
0.1
1.05
±
0.1
0.55
±
0.1
C1.0
90
°
C1.0
1
2
3
0.35
±
0.1
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