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參數資料
| 型號： | 2SD2527P |
| 英文描述： | TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 4A I(C) | TO-220VAR |
| 中文描述： | 晶體管|晶體管|叩| 60V的五（巴西）總裁| 4A條一（c）|至220VAR |
| 文件頁數： | 1/2頁 |
| 文件大小： | 61K |
| 代理商： | 2SD2527P |
1
Power Transistors
2SD2523
Silicon NPN triple diffusion mesa type
For horizontal deflection output
I
Features
G
Incorporating a built-in damper diode
G
High breakdown voltage, and high reliability through the use of a
glass passivation layer
G
High-speed switching
G
Wide area of safe operation (ASO)
G
Full-pack package with outstanding insulation, which can be in-
stalled to the heat sink with one screw
I
Absolute Maximum Ratings
(T
C
=25C)
Parameter
Collector to base voltage
Collector to emitter voltage
Emitter to base voltage
Collector current
Peak collector current
Peak base current
Reverse peak base current
Collector power
dissipation
Junction temperature
Storage temperature
Symbol
V
CBO
V
CES
V
EBO
I
C
I
CP*
I
BP
I
BP
P
C
T
j
T
stg
Ratings
1700
1700
5
6
15
4
–3
90
3
150
–55 to +150
Unit
V
V
V
A
A
A
A
W
C
C
T
C
=25
°
C
Ta=25
°
C
*
Non-repetitive peak
I
Electrical Characteristics
(T
C
=25C)
Parameter
Collector cutoff current
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Storage time
Fall time
Diode forward voltage
Symbol
I
CBO
V
EBO
h
FE1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
t
stg
t
f
V
F
Conditions
V
CB
= 1000V, I
E
= 0
V
CB
= 1700V, I
E
= 0
I
E
= 500mA, I
C
= 0
V
CE
= 5V, I
C
= 1A
V
CE
= 5V, I
C
= 5A
I
C
= 5A, I
B
= 1.6A
I
C
= 5A, I
B
= 1.6A
V
CE
= 10V, I
C
= 0.1A, f = 0.5MHz
I
C
= 5A, I
Bend
= 1.6A, L
leak
= 5
μ
H
I
C
= 6A, I
B
= 0
min
5
6
3
typ
3
max
50
1
25
10
5
1.5
12
0.8
–2
Unit
μ
A
mA
V
V
V
MHz
μ
s
μ
s
V
Unit: mm
Internal Connection
1:Base
2:Collector
3:Emitter
TOP–3E Full Pack Package
15.5
±
0.5
2
±
0
2
±
0
2
1
±
0
3
±
0
5
±
0
2
0
±
0
2
2
1
3.0
±
0.3
φ
3.2
±
0.1
4
5.45
±
0.3
1
2
3
5.45
±
0.3
1.1
±
0.1
2.0
±
0.2
4.0
5
°
5
°
5
°
5
°
5
°
5
°
0.7
±
0.1
C
B
E
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