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參數(shù)資料
| 型號： | 2SD2527Q |
| 廠商： | PANASONIC CORP |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | TO-220D, FULL PACK-3 |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 181K |
| 代理商： | 2SD2527Q |
Power Transistors
365
2SD2527
Silicon NPN triple diffusion planar type
For power amplification with high forward current transfer ratio
I Features
High forward current transfer ratio h
FE
Satisfactory linearity of forward current transfer ratio h
FE
Full-pack package which can be installed to the heat sink with one
screw
I Absolute Maximum Ratings T
C = 25°C
1: Base
2: Collector
3: Emitter
TO-220D-A1 Package
Unit: mm
I Electrical Characteristics T
C = 25°C
Parameter
Symbol
Rating
Unit
Collector to base voltage
VCBO
80
V
Collector to emitter voltage
VCEO
60
V
Emitter to base voltage
VEBO
6V
Peak collector current
ICP
8A
Collector current
IC
4A
Base current
IB
1A
Collector power
TC = 25
°CP
C
40
W
dissipation
Ta = 25
°C
2.0
Junction temperature
Tj
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Collector cutoff current
ICBO
VCB = 80 V, IE = 0
100
A
ICEO
VCE = 40 V, IB = 0
100
A
Emitter cutoff current
IEBO
VEB = 6 V, IC = 0
100
A
Collector to emitter voltage
VCEO
IC = 25 mA, IB = 0
60
V
Forward current transfer ratio *
hFE
VCE = 4 V, IC = 0.8 A
500
2 000
Collector to emitter saturation voltage
VCE(sat)
IC = 3 A, IB = 0.075 A
0.7
V
Transition frequency
fT
VCE = 12 V, IC = 0.3 A, f = 10 MHz
30
MHz
Storage time
tstg
IC = 3 A, IB1 = 0.06 A, IB2 = 0.06 A, VCC = 50 V
20
s
Note) *: Rank classification
Rank
Q
P
hFE
500 to 1 200 800 to 2 000
1.4±0.2
1.6±0.2
0.8±0.1
0.55±0.15
2.54±0.30
5.08±0.50
12
3
2.6±0.1
2.9±0.2
4.6±0.2
φ 3.2±0.1
3.0
±0.5
9.9±0.3
15.0
±0.5
13.7
±0.2
4.2
±0.2
Solder
Dip
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Please
visit
following
URL
about
latest
information.
http://panasonic.co.jp/semicon/e-index.html
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| 2SD2528 | 功能描述:TRANS NPN LF 60VCEO 5A TO-220D RoHS:是 類別:分離式半導體產品 >> 晶體管(BJT) - 單路 系列:- 標準包裝:1 系列:- 晶體管類型:NPN 電流 - 集電極 (Ic)（最大）:1A 電壓 - 集電極發(fā)射極擊穿（最大）:30V Ib、Ic條件下的Vce飽和度（最大）:200mV @ 100mA，1A 電流 - 集電極截止（最大）:100nA 在某 Ic、Vce 時的最小直流電流增益 (hFE):300 @ 500mA，5V 功率 - 最大:710mW 頻率 - 轉換:100MHz 安裝類型:表面貼裝 封裝/外殼:TO-236-3，SC-59，SOT-23-3 供應商設備封裝:SOT-23-3（TO-236） 包裝:Digi-Reel® 其它名稱:MMBT489LT1GOSDKR |
| 2SD2536(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington NPN 115V 2A 3-Pin LSTM |
| 2SD2537T100 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD2537T100V | 功能描述:兩極晶體管 - BJT NPN 25V 1.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2539 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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