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參數資料
| 型號： | 2SD2531 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 4 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 封裝： | LEAD FREE, 2-10R1A, SC-67, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 127K |
| 代理商： | 2SD2531 |
2SD2531
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type
2SD2531
Power Amplifier Applications
Low collector saturation voltage: VCE (sat) = 0.5 V (typ.)
(IC = 2.5 A, IB = 0.25 A)
High power dissipation: PC = 25 W (Tc = 25°C)
Absolute Maximum Ratings (Tc = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
60
V
Collector-emitter voltage
VCEO
60
V
Emitter-base voltage
VEBO
7
V
Collector current
IC
4
A
Base current
IB
1
A
Ta = 25°C
2.0
Collector power
dissipation
Tc = 25°C
PC
25
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are
within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook
(“Handling Precautions”/Derating Concept and Methods) and individual reliability data (i.e. reliability test report
and estimated failure rate, etc).
Unit: mm
JEDEC
―
JEITA
SC-67
TOSHIBA
2-10R1A
Weight: 1.7 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2536(F) | 制造商:Toshiba America Electronic Components 功能描述:Trans Darlington NPN 115V 2A 3-Pin LSTM |
| 2SD2537T100 | 制造商:ROHM Semiconductor 功能描述: |
| 2SD2537T100V | 功能描述:兩極晶體管 - BJT NPN 25V 1.2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2539 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD2539306 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
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