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參數(shù)資料
型號(hào): 2SD2584(2-7B5A)
元件分類(lèi): 功率晶體管
英文描述: 7 A, 100 V, NPN, Si, POWER TRANSISTOR
封裝: LEAD FREE, 2-7B5A, 3 PIN
文件頁(yè)數(shù): 1/5頁(yè)
文件大小: 162K
代理商: 2SD2584(2-7B5A)
2SD2584
2006-11-21
1
TOSHIBA Transistor Silicon NPN Triple Diffused Type (Darlington)
2SD2584
High Power Switching Applications
Hammer Drive, Pulse Motor Drive Applications
High DC current gain: hFE = 2000 (min) (VCE = 3 V, IC = 3 A)
Low saturation voltage: VCE (sat) = 1.5 V (max) (IC = 3 A)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Collector-base voltage
VCBO
120
V
Collector-emitter voltage
VCEO
100
V
Emitter-base voltage
VEBO
6
V
DC
IC
7
Collector current
Pulse
ICP
10
A
Base current
IB
0.7
A
Ta = 25°C
1.5
Collector power
dissipation
Tc = 25°C
PC
20
W
Junction temperature
Tj
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/Derating Concept and Methods) and individual
reliability data (i.e. reliability test report and estimated failure rate,
etc).
Equivalent Circuit
Unit: mm
JEDEC
JEITA
TOSHIBA
2-7B5A
Weight: 0.36 g (typ.)
JEDEC
JEITA
TOSHIBA
2-7B7A
Weight: 0.36 g (typ.)
BASE
EMITTER
≈ 5 k
≈ 150
COLLECTOR
相關(guān)PDF資料
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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