- 您現在的位置：買賣IC網 > PDF目錄49984 > 2SD2663 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-126 PDF資料下載
參數資料
| 型號： | 2SD2663 |
| 元件分類： | 功率晶體管 |
| 英文描述： | 3 A, 100 V, NPN, Si, POWER TRANSISTOR, TO-126 |
| 封裝： | TO-126ML, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 35K |
| 代理商： | 2SD2663 |
2SB1700 / 2SD2663
No.7380-1/4
Driver Applications
Applications
Motor drivers, printer hammer drivers, relay drivers,
voltage regulator control.
Features
High DC current gain.
Large current capacity and wide ASO.
Micaless package facilitating mounting.
( ) : 2SB1700
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Collector-to-Base Voltage
VCBO
(--)110
V
Collector-to-Emitter Voltage
VCEO
(--)100
V
Emitter-to-Base Voltage
VEBO
(--)6
V
Collector Current
IC
(--)3
A
Collector Current (Pulse)
ICP
(--)5
A
Collector Dissipation
PC
1.5
W
Tc=25
°C10
W
Junction Temperature
Tj
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Collector Cutoff Current
ICBO
VCB=(--)80V, IE=0
(--)0.1
mA
Emitter Cutoff Current
IEBO
VEB=(--)5V, IC=0
(--)3.0
mA
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN7380
2SB1700 / 2SD2663
Package Dimensions
unit : mm
2042B
[2SB1700 / 2SD2663]
O1003 TS IM TA-100279, 100280
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
PNP/NPN Epitaxial Planar Silicon Darlington Transistors
1 : Emitter
2 : Collector
3 : Base
SANYO : TO-126ML
4.0
1.0
8.0
1.6
0.8
0.75
1.5
7.5
3.0
1.4
11.0
15.5
3.3
3.0
0.7
2.4
4.8
1.7
1
2
3
相關PDF資料 |
PDF描述 |
|---|---|
| 2SD2672T146 | 4000 mA, 12 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2686 | 1 A, 60 V, NPN, Si, POWER TRANSISTOR |
| 2SD2688LS | 10 A, 800 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 2SD2695 | 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 2SD2701TL | 2000 mA, 30 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD2670TL | 功能描述:兩極晶體管 - BJT NPN 12V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2671TL | 功能描述:兩極晶體管 - BJT NPN 30V 2A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2672TL | 功能描述:兩極晶體管 - BJT NPN 12V 4A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2673TL | 功能描述:兩極晶體管 - BJT NPN 30V 3A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2SD2674TL | 功能描述:兩極晶體管 - BJT NPN 12V 1.5A RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發射極最大電壓 VCEO:- 40 V 發射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
發布緊急采購，3分鐘左右您將得到回復。