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參數資料
| 型號： | 2SD874 |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號晶體管 |
| 英文描述： | Silicon NPN epitaxial planer type(For low-frequency power amplification) |
| 中文描述： | 1000 mA, 25 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 封裝： | ROHS COMPLIANT, MINIP3-F1, 3 PIN |
| 文件頁數： | 1/2頁 |
| 文件大小： | 39K |
| 代理商： | 2SD874 |
1
Transistor
2SD874, 2SD874A
Silicon NPN epitaxial planer type
For low-frequency power amplification
Complementary to 2SB766 and 2SB766A
I
Features
G
Large collector power dissipation P
C
.
G
Low collector to emitter saturation voltage V
CE(sat)
.
G
Mini Power type package, allowing downsizing of the equipment
and automatic insertion through the tape packing and the maga-
zine packing.
I
Absolute Maximum Ratings
(Ta=25C)
Parameter
Symbol
Unit: mm
Collector to
base voltage
Collector to
emitter voltage
Emitter to base voltage
Peak collector current
Collector current
Collector power dissipation
Junction temperature
Storage temperature
1:Base
2:Collector
3:Emitter
EIAJ:SC–62
Mini Power Type Package
4.5
±
0.1
1.6
±
0.2
2
±
0
2
±
0
0
1
+
–
4
+
–
3.0
±
0.15
1.5
±
0.1
0.4
±
0.08
0.5
±
0.08
1.5
±
0.1
0.4
±
0.04
45
°
marking
3
2
1
V
CBO
V
CEO
V
EBO
I
CP
I
C
P
C*
T
j
T
stg
Ratings
30
60
25
50
5
1.5
1
1
150
–55 ~ +150
Unit
V
V
V
A
A
W
C
C
2SD874
2SD874A
2SD874
2SD874A
I
Electrical Characteristics
(Ta=25C)
Parameter
Collector cutoff current
Collector to base
voltage
Collector to emitter
voltage
Emitter to base voltage
Forward current transfer ratio
Collector to emitter saturation voltage
Base to emitter saturation voltage
Transition frequency
Collector output capacitance
Symbol
I
CBO
V
CBO
V
CEO
V
EBO
h
FE1*1
h
FE2
V
CE(sat)
V
BE(sat)
f
T
C
ob
Conditions
V
CB
= 20V, I
E
= 0
I
C
= 10
μ
A, I
E
= 0
I
C
= 2mA, I
B
= 0
I
E
= 10
μ
A, I
C
= 0
V
CE
= 10V, I
C
= 500mA
*2
V
CE
= 5V, I
C
= 1A
*2
I
C
= 500mA, I
B
= 50mA
*2
I
C
= 500mA, I
B
= 50mA
*2
V
CB
= 10V, I
E
= –50mA, f = 200MHz
V
CB
= 10V, I
E
= 0, f = 1MHz
min
30
60
25
50
5
85
50
typ
160
0.2
0.85
200
max
0.1
340
0.4
1.2
20
Unit
μ
A
V
V
V
V
V
MHz
pF
2SD874
2SD874A
2SD874
2SD874A
*1
h
FE1
Rank classification
Rank
Q
R
S
h
FE1
85 ~ 170
120 ~ 240
170 ~ 340
2SD874
ZQ
ZR
ZS
2SD874A
YQ
YR
YS
Marking symbol :
Z
(2SD874)
Y
(2SD874A)
Marking
Symbol
*
Printed circuit board: Copper foil area of 1cm
2
or more, and the board
thickness of 1.7mm for the collector portion
*2
Pulse measurement
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|---|---|
| 2SD875 | Silicon NPN epitaxial planer type(For low-frequency power amplification) |
| 2SD878 | HIGH POWER AMPLIFIER APPLICATIONS |
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| 2SD889 | 2SD889 |
| 2SD893 | S |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SD874A | 制造商:Distributed By MCM 功能描述:SUB ONLY TRANSISTOR SC-6260V 1A .5W ECB SURFACE MOUNT 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SD874-Q | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Power Transistors |
| 2SD874R | 制造商:NEC 功能描述:2SD874R |
| 2SD874-R | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Power Transistors |
| 2SD874-S | 制造商:MCC 制造商全稱:Micro Commercial Components 功能描述:NPN Silicon Power Transistors |
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