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參數資料
| 型號： | 2SJ268 |
| 廠商： | Sanyo Electric Co.,Ltd. |
| 英文描述： | P-Channel Silicon MOSFET for Ultrahigh-Speed Switching Applications(用于超高速轉換應用的P溝道MOSFET) |
| 中文描述： | 個P - MOSFET的超高通道硅高速開關應用（用于超高速轉換應用的P溝道MOSFET的） |
| 文件頁數： | 1/4頁 |
| 文件大小： | 100K |
| 代理商： | 2SJ268 |
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
P-Channel Silicon MOSFET
2SJ268
Ultrahigh-Speed Switching Applications
Ordering number:EN4237
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
42899TH (KT)/50793TH (KOTO) AX-8376 No.4237–1/4
unit:mm
2090A
[2SJ268]
Features
· Low ON resistance.
· Ultrahigh-speed switching.
· Low-voltage drive.
· Surface mount type device making the following
possible.
· Reduction in the number of manufacturing pro-
cesses for 2SJ268-applied equipment.
· High density surface mount applications.
· Small size of 2SJ268-applied equipment.
1 : Gate
2 : Drain
3 : Source
SANYO : SMP
Package Dimensions
unit:mm
2093A
[2SJ268]
1 : Gate
2 : Drain
3 : Source
SANYO : SMP-FD
10.2
2
1
9
0.8
1
1.2
0
1
8
4.5
1.3
0.4
2.55
2.55
2
1
2
3
10.2
1.2
2.55
2.55
2.55
2.55
4.5
0 to 0.3
0.4
1.3
9
3
2
1
8
1
1
0
0.8
1
2
3
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ273 | Ultra high-Speed Switching Applications P-Channel Silicon MOSFET(超高速轉換應用P溝道硅MOSFET) |
| 2SJ275FD | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ277FD | TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 15A I(D) | TO-263AB |
| 2SJ279 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SJ279(L) | TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-251AA |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ268-DL-E | 制造商:SANYO 功能描述:Pch 60V 18A 0.08 rlo?ec Tape & Reel 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFETP CH60V18ASOT404 制造商:Sanyo 功能描述:0 |
| 2SJ268FD | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 60V V(BR)DSS | 18A I(D) | TO-263AB |
| 2SJ269 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 6A I(D) | TO-220AB |
| 2SJ270 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 8A I(D) | TO-220AB |
| 2SJ271 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 100V V(BR)DSS | 15A I(D) | TO-220AB |
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