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參數資料
| 型號： | 2SJ377 |
| 元件分類： | JFETs |
| 英文描述： | 5 A, 60 V, 0.16 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | SC-64, 2-7B1B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 748K |
| 代理商： | 2SJ377 |
2SJ377
2006-11-16
1
TOSHIBA Field Effect Transistor Silicon P-Channel MOS Type (L
2
πMOSV)
2SJ377
Relay Drive, DC/DC Converter and Motor Drive
Applications
4 V gate drive
Low drainsource ON-resistance
: RDS (ON) = 0.16 (typ.)
High forward transfer admittance
: |Yfs| = 4.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 60 V)
Enhancement mode
: Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristic
Symbol
Rating
Unit
Drainsource voltage
VDSS
60
V
Draingate voltage (RGS = 20 k)
VDGR
60
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Single-pulse avalanche energy
(Note 2)
EAS
273
mJ
Avalanche current
IAR
5
A
Repetitive avalanche energy (Note 3)
EAR
2
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage,
etc.) are within the absolute maximum ratings. Please design the
appropriate reliability upon reviewing the Toshiba Semiconductor
Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Thermal Characteristics
Characteristic
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 14.84 mH, RG = 25 ,
IAR = 5 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ377(Q) | 制造商:Toshiba 功能描述:Pch -60V -5A PW-MOLD(5.5~6.8) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
| 2SJ377(TE16L,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold T/R |
| 2SJ377(TE16L1,NQ) | 功能描述:MOSFET P-Ch 60V 5A Rdson 0.19 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ377(TE16R) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
| 2SJ377(TE16R1,NQ) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 3-Pin(2+Tab) New PW-Mold T/R 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CHAN 60V 5A PW-MOLD |
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