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參數資料

2SJ479(L), 2SJ479(S)

Silicon P Channel DV–L MOS FET

High Speed Power Switching

ADE-208-541 (Z)

1st. Edition

Sep. 1997

Features

Low on-resistance

DS(on) = 25 m typ.

4V gate drive devices.

High speed switching

Outline

1. Gate

2. Drain

3. Source

4. Drain

LDPAK

相關PDF資料	PDF描述
2SJ476-01S	Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK11	TRANSISTOR \| JFET \| N-CHANNEL \| 6.5MA I(DSS) \| TO-17
2SK1101-01M	Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK1102-01M	TRANSISTOR \| MOSFET \| N-CHANNEL \| 500V V(BR)DSS \| 10A I(D) \| TO-218VAR
2SK1103O	TRANSISTOR \| JFET \| N-CHANNEL \| 200UA I(DSS) \| TO-236

相關代理商/技術參數	參數描述
2SJ476-01L	制造商:FUJI 制造商全稱:Fuji Electric 功能描述:Power MOSFET
2SJ476-01L_06	制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET
2SJ476-01LSC	制造商:Fuji Electric 功能描述:
2SJ476-01S	制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET
2SJ477-01MR	制造商:FUJI 制造商全稱:Fuji Electric 功能描述:P-CHANNEL SILICON POWER MOSFET

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