- 您現在的位置：買賣IC網 > PDF目錄49989 > 2SJ508 1000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET PDF資料下載
參數資料
| 型號： | 2SJ508 |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 1000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 封裝： | LEAD FREE, 2-5K1B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 214K |
| 代理商： | 2SJ508 |
2SJ508
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
πMOSV)
2SJ508
Chopper Regulator, DCDC Converter and Motor Drive
Applications
4-V gate drive
Low drainsource ON resistance
: RDS (ON) = 1.34 (typ.)
High forward transfer admittance
: |Yfs| = 0.7 S (typ.)
Low leakage current : IDSS = 100 μA (max) (VDS = 100 V)
Enhancement mode
: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
100
V
Draingate voltage (RGS = 20 k)
VDGR
100
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
1
A
Drain current
Pulse (Note 1)
IDP
3
A
Drain power dissipation
PD
0.5
W
Drain power dissipation
(Note 2)
PD
1.5
W
Single pulse avalanche energy
(Note 3)
EAS
136.5
mJ
Avalanche current
IAR
1
A
Repetitive avalanche energy (Note 4)
EAR
0.05
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note:
Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/Derating Concept and
Methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to ambient
Rth (cha)
250
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: Mounted on a ceramic substrate (25.4 mm × 25.4 mm × 0.8 mm)
Note 3: VDD = 50 V, Tch = 25°C (initial), L = 168 mH, RG = 25 , IAR = 1 A
Note 4: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Marking
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
25K1B
Weight: 0.05 g (typ.)
Z
E
Part No.
(or abbreviation code)
Lot No.
Note 5
Note 5: A line to the right of a Lot No. identifies the indication of product Labels.
Without a line: [[Pb]]/INCLUDES > MCV
With a line: [[G]]/RoHS COMPATIBLE or [[G]]/RoHS [[Pb]]
Please contact your TOSHIBA sales representative for details as to environmental
matters such as the RoHS compatibility of Product. The RoHS is the Directive
2002/95/EC of the European Parliament and of the Council of 27 January 2003 on
the restriction of the use of certain hazardous substances in electrical and
electronic equipment.
相關PDF資料 |
PDF描述 |
|---|---|
| 2SJ509 | 1000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ511 | 2000 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ511 | 2 mA, 30 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ516 | 6.5 A, 250 V, 0.8 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ526 | 0.23 ohm, POWER, FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ508 (TE12L,F) | 制造商:Toshiba America Electronic Components 功能描述:TOS2SJ508 (TE12L,F) TRANSISTORS /POWER |
| 2SJ508(TE12L,F) | 制造商:Toshiba 功能描述:Trans MOSFET P-CH 100V 1A 4-Pin (3+Tab) PW-Mini T/R 制造商:Toshiba America Electronic Components 功能描述:Transistor,MOSFET |
| 2SJ508_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator, DC−DC Converter and Motor Drive Applications |
| 2SJ508_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Chopper Regulator, DC?DC Converter and Motor Drive |
| 2SJ508TE12L | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET P-CH 100V 1A 4PIN PW-MINI - Tape and Reel |
發布緊急采購，3分鐘左右您將得到回復。