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參數(shù)資料
| 型號： | 2SJ567 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (ヰ-MOSV) |
| 中文描述： | 東芝場效應(yīng)晶體管硅P通道馬鞍山類型（ヰ- MOSV） |
| 文件頁數(shù)： | 1/7頁 |
| 文件大小： | 237K |
| 代理商： | 2SJ567 |
2SJ567
2002-08-12
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (
π
-MOSV)
2SJ567
Switching Applications
Chopper Regulator, DC-DC Converter and
Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 1.6
(typ.)
High forward transfer admittance: |Y
fs
| = 2.0 S (typ.)
Low leakage current: I
DSS
=
100 μA (max) (V
DS
=
200 V)
Enhancement-model: V
th
=
1.5 ~
3.5 V (V
DS
=
10 V, I
D
=
1 mA)
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
200
V
Drain-gate voltage (R
GS
20 k )
V
DGR
200
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
2.5
Drain current
Pulse
(Note 1)
I
DP
10
A
Drain power dissipation (Tc 25°C)
P
D
20
W
Single pulse avalanche energy
(Note 2)
E
AS
97.5
mJ
Avalanche current
I
AR
2.5
A
Repetitive avalanche energy (Note 3)
E
AR
2.0
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
125
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
50 V, Tch 25°C (initial), L 25.2 mH, I
AR
2.5 A
R
G
25 ,
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Industrial Applications
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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