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參數(shù)資料
| 型號： | 2SJ610 |
| 廠商： | Toshiba Corporation |
| 元件分類： | DC/DC變換器 |
| 英文描述： | Switching Regulator, DC-DC Converter and Motor Drive Applications |
| 中文描述： | 開關(guān)穩(wěn)壓器，DC - DC變換器和電機驅(qū)動應(yīng)用 |
| 文件頁數(shù)： | 1/7頁 |
| 文件大?。?/td> | 235K |
| 代理商： | 2SJ610 |
2SJ610
2002-09-11
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (
π
-MOS
V
)
2SJ610
Switching Regulator, DC-DC Converter and
Motor Drive Applications
Low drain-source ON resistance: R
DS (ON)
= 1.85
(typ.)
High forward transfer admittance: |Y
fs
| = 18 S (typ.)
Low leakage current: I
DSS
=
100 μA (V
DS
=
250 V)
Enhancement-mode: V
th
=
1.5~
3.5 V (V
DS
= 10 V, I
D
= 1 mA)
Maximum Ratings
(Tc 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
250
V
Drain-gate voltage (R
GS
20 k )
V
DGR
250
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
2.0
Drain current
Pulse (t 1 ms)
(Note 1)
I
DP
4.0
A
Drain power dissipation
Single pulse avalanche energy
P
D
20
W
(Note 2)
E
AS
180
mJ
Avalanche current
I
AR
2.0
A
Repetitive avalanche energy (Note 3)
E
AR
2.0
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
R
th (ch-a)
125
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2:
V
DD
50 V, T
ch
25°C (initial), L 75 mH, I
AR
2.0 A,
R
G
25
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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| 2SJ610_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon P-Channel MOS Type Switching Regulator, DC/DC Converter and Motor Drive Applications |
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