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參數資料
| 型號： | 2SJ620 |
| 廠商： | Toshiba Corporation |
| 英文描述： | Bipolar Transistor; Package/Case:TO-3; Current Rating:10A; Voltage Rating:35V |
| 中文描述： | 東芝場效應晶體管硅P通道馬鞍山類型（二級-ヰ- MOSV） |
| 文件頁數： | 1/6頁 |
| 文件大小： | 225K |
| 代理商： | 2SJ620 |
2SJ620
2002-09-11
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L
2
-
π
-MOS
V
)
2SJ620
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
4-V gate drive
Low drain-source ON resistance: R
DS (ON)
= 63 m
(typ.)
High forward transfer admittance: |Y
fs
| =
1
5 S (typ.)
Low leakage current: I
DSS
=
1
00 μA (max) (V
DS
=
1
00 V)
Enhancement-model: V
th
=
0.8 to
2.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
100
V
Drain-gate voltage (R
GS
20 k )
V
DGR
100
V
Gate-source voltage
V
GSS
20
V
DC
(Note 1)
I
D
18
Drain current
Pulse (Note 1)
I
DP
72
A
Drain power dissipation (Tc 25°C)
P
D
125
W
Single pulse avalanche energy
(Note 2)
E
AS
937
mJ
Avalanche current
I
AR
18
A
Repetitive avalanche energy (Note 3)
E
AR
12.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch-c)
1.0
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: V
DD
50 V, T
ch
25°C (initial), L 3.56 mH, R
G
25 ,
I
AR
18 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
―
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
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相關代理商/技術參數 |
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|---|---|
| 2SJ620(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 4-Pin(2+2Tab) TFP T/R |
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