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| 型號(hào)： | 2SJ610(2-7J1B) |
| 元件分類： | JFETs |
| 英文描述： | 2 A, 250 V, 2.55 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | 2-7J1B, SC-64, 3 PIN |
| 文件頁數(shù)： | 1/3頁 |
| 文件大小： | 331K |
| 代理商： | 2SJ610(2-7J1B) |
2SJ610
2002-09-11
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (π-MOSV)
2SJ610
Switching Regulator, DC-DC Converter and
Motor Drive Applications
Low drain-source ON resistance: RDS (ON) = 1.85 (typ.)
High forward transfer admittance: |Yfs| = 18 S (typ.)
Low leakage current: IDSS = 100 A (VDS = 250 V)
Enhancement-mode: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Tc
==== 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
250
V
Drain-gate voltage (RGS = 20 k)
VDGR
250
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
2.0
Drain current
Pulse (t
= 1 ms)
(Note 1)
IDP
4.0
A
Drain power dissipation
PD
20
W
Single pulse avalanche energy
(Note 2)
EAS
180
mJ
Avalanche current
IAR
2.0
A
Repetitive avalanche energy (Note 3)
EAR
2.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
6.25
°C/W
Thermal resistance, channel to ambient
Rth (ch-a)
125
°C/W
Note 1: Please use devices on condition that the channel temperature
is below 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 75 mH, IAR = 2.0 A,
RG = 25
Note 3: Repetitive rating: Pulse width limited by maximum channel
temperature
This transistor is an electrostatic sensitive device. Please handle with
caution.
Unit: mm
JEDEC
―
JEITA
SC-64
TOSHIBA
2-7B1B
Weight: 0.36 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
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