- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄49990 > 2SJ619 16 A, 100 V, 0.32 ohm, P-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SJ619 |
| 元件分類： | JFETs |
| 英文描述： | 16 A, 100 V, 0.32 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-9F1B, SC-97, 4 PIN |
| 文件頁數(shù)： | 1/6頁 |
| 文件大小： | 178K |
| 代理商： | 2SJ619 |
2SJ619
2009-09-29
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-
π-MOSV)
2SJ619
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
4-V gate drive
Low drain-source ON resistance: RDS (ON) = 0.15 Ω (typ.)
High forward transfer admittance: Yfs = 7.7 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 100 V)
Enhancement mode: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 kΩ)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
16
Drain current
Pulse
(Note 1)
IDP
64
A
Drain power dissipation (Tc
= 25°C)
PD
75
W
Single pulse avalanche energy
(Note 2)
EAS
292
mJ
Avalanche current
IAR
16
A
Repetitive avalanche energy (Note 3)
EAR
7.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Circuit Configuration
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.67
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 25 V, Tch = 25°C (initial), L = 1.84 mH, RG = 25 Ω, IAR = 16 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device. Handle with care.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-9F1C
Weight: 0.74 g (typ.)
1
3
4
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SJ620 | 18 A, 100 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ632 | 2 A, 60 V, 0.56 ohm, P-CHANNEL, Si, POWER, MOSFET |
| 2SJ636 | 3000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ636-TL | 3000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
| 2SJ636 | 3000 mA, 100 V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SJ619(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET P-CH 100V 16A SC-97 |
| 2SJ619_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon P Channel MOS Type Switching Regulator and DC-DC Converter Applications |
| 2SJ619_09 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Switching Regulator and DC-DC Converter Applications Motor Drive Applications |
| 2SJ620 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-ヰ-MOSV) |
| 2SJ620(TE24L,Q) | 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET P-CH 60V 5A 4-Pin(2+2Tab) TFP T/R |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。