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參數(shù)資料
型號: 2SJ620
元件分類: JFETs
英文描述: 18 A, 100 V, 0.12 ohm, P-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-9F1B, SC-97, 4 PIN
文件頁數(shù): 1/6頁
文件大小: 201K
代理商: 2SJ620
2SJ620
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type (L2-π-MOSV)
2SJ620
Switching Regulator and DC-DC Converter Applications
Motor Drive Applications
4-V gate drive
Low drain-source ON resistance: RDS (ON) = 63 m (typ.)
High forward transfer admittance: |Yfs| = 15 S (typ.)
Low leakage current: IDSS = 100 A (max) (VDS = 100 V)
Enhancement model: Vth = 0.8 to 2.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta
= 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
VDSS
100
V
Drain-gate voltage (RGS = 20 k)
VDGR
100
V
Gate-source voltage
VGSS
±20
V
DC
(Note 1)
ID
18
Drain current
Pulse (Note 1)
IDP
72
A
Drain power dissipation (Tc
= 25°C)
PD
125
W
Single pulse avalanche energy
(Note 2)
EAS
937
mJ
Avalanche current
IAR
18
A
Repetitive avalanche energy (Note 3)
EAR
12.5
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (ch-c)
1.0
°C/W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 50 V, Tch = 25°C (initial), L = 3.56 mH, RG = 25 ,
IAR = 18 A
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature
This transistor is an electrostatic-sensitive device. Please handle with caution.
Unit: mm
JEDEC
JEITA
SC-97
TOSHIBA
2-9F1B
Weight: 0.74 g (typ.)
Circuit Configuration
1
3
4
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