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參數資料
| 型號： | 2SJ651 |
| 廠商： | SANYO SEMICONDUCTOR CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 60 V, 0.092 ohm, P-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | TO-220ML, 3 PIN |
| 文件頁數： | 1/5頁 |
| 文件大小： | 38K |
| 代理商： | 2SJ651 |
2SJ651
No.7501-1/5
Features
Low ON-resistance.
Ultrahigh-speed switching.
4V drive.
Avalanche resistance guarantee.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
--60
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
--20
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
--80
A
Allowable Power Dissipation
PD
2.0
W
Tc=25
°C25
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Avalanche Energy (Single Pulse) *1
EAS
175
mJ
Avalanche Current *2
IAV
--20
A
Note : *1 VDD=30V, L=500H, IAV=--20A
*2 L
≤500H, Single pulse
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=--1mA, VGS=0V
--60
V
Zero-Gate Voltage Drain Current
IDSS
VDS=--60V, VGS=0V
--1
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0V
±10
A
Cutoff Voltage
VGS(off)
VDS=--10V, ID=--1mA
--1.2
--2.6
V
Forward Transfer Admittance
yfs
VDS=--10V, ID=--10A
11
17
S
Static Drain-to-Source On-State Resistance
RDS(on)1
ID=--10A, VGS=--10V
45
60
m
RDS(on)2
ID=--10A, VGS=--4V
65
92
m
Marking : J651
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : EN7501A
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N2505QA MS IM TA-00001928 / 52703 TS IM TA-100559
2SJ651
P-Channel Silicon MOSFET
DC / DC Converter Applications
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PDF描述 |
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| 2SJ664-TL | 17 A, 100 V, 0.193 ohm, P-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SJ651_03 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:DC / DC Converter Applications |
| 2SJ651-S | 制造商:ON Semiconductor 功能描述: |
| 2SJ652 | 功能描述:MOSFET POWER MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SJ652_12 | 制造商:SANYO 制造商全稱:Sanyo Semicon Device 功能描述:General-Purpose Switching Device Applications |
| 2SJ652-1E | 功能描述:MOSFET PCH 4V DRIVE SERIES RoHS:否 制造商:NXP Semiconductors 晶體管極性:N-Channel 汲極/源極擊穿電壓:30 V 閘/源擊穿電壓: 漏極連續電流:180 mA 電阻汲極/源極 RDS（導通）:4.5 Ohms 配置: 最大工作溫度:+ 150 C 安裝風格:SMD/SMT 封裝 / 箱體:SOT-416 封裝:Reel |
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