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參數資料
| 型號： | 2SK0123(2SK123) |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 小信號裝置-小信號場效應管-結場效應管 |
| 文件頁數： | 1/3頁 |
| 文件大小： | 49K |
| 代理商： | 2SK0123(2SK123) |
1
Publication date: January 2002
SJF00005BED
Silicon Junction FETs (Small Signal)
2SK0123
(2SK123)
Silicon N-Channel Junction FET
For impedance conversion in low frequency
For electret capacitor microphone
I
Features
G
High mutual conductance g
m
G
Low noise voltage of NV
1: Drain
2: Source
3: Gate
Mini3-G1 Package
I
Absolute Maximum Ratings
(T
a
=
25
°
C)
Parameter
Drain to Source voltage
Drain to Gate voltage
Drain to Source current
Drain to Gate current
Gate to Source current
Allowable power dissipation
Operating ambient temperature
Storage temperature
Symbol
V
DSO
V
DGO
I
DSO
I
DGO
I
GSO
P
D
T
opr
T
stg
Ratings
20
20
2
2
2
200
20 to
+
80
55 to
+
150
Unit
V
V
mA
mA
mA
mW
°C
°C
I
Electrical Characteristics
(T
a
=
25
°
C)
Parameter
Current consumption
Drain to Source cut-off current
Mutual conductance
Noise figure
Voltage gain
Voltage gain difference
Symbol
I
D
I
DSS
g
m
NV
G
V1
G
V2
G
V3
|G
V2
G
V1
|
|G
V1
G
V3
|
Conditions
V
D
=
4.5 V, C
O
=
10 pF, R
D
=
2.2 k
±
1%
V
DS
=
4.5 V, V
GS
=
0
V
D
=
4.5 V, V
GS
=
0, f
=
1 kHz
V
D
=
4.5V, R
D
=
2.2 k
±
1%
C
O
=
10 pF, A-curve
V
D
=
4.5 V, R
D
=
2.2 k
±
1%
C
O
=
10 pF, e
G
=
10 mV, f
=
1 kHz
V
D
=
12 V, R
D
=
2.2 k
±
1%
C
O
=
10 pF, e
G
=
10 mV, f
=
1 kHz
V
D
=
1.5 V, R
D
=
2.2 k
±
1%
C
O
=
10 pF, e
G
=
10 mV, f
=
1 kHz
min
100
95
0.7
3
0
4.5
0
0
max
600
480
4
+
3.5
+
3.5
Unit
μ
A
μ
A
mS
μ
V
dB
dB
dB
dB
dB
typ
1.6
2
3.3
0.3
Marking Symbol: 1H
Note: For the forming type, (Y) is indicated after the part No.
Note) The part number in the parenthesis shows conventional part number.
0.40
+0.10
(
1
+
–
2
+
–
2
1
3
(0.95) (0.95)
1.9
±
0.1
2.90
+0.20
0.16
+0.10
0
±
0
5
10
0
1
+
–
1
+
–
Unit: mm
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