
281
Silicon MOS FETs (Small Signal)
2SK0620 (2SK620)
Silicon N-Channel MOS FET
For switching
I Features
G High-speed switching
G Mini-type package, allowing downsizing of the sets and automatic
insertion through the tape/magazine packing.
I Absolute Maximum Ratings (Ta = 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Max drain current
Allowable power dissipation
Channel temperature
Storage temperature
Symbol
VDSS
VGSO
ID
IDP
PD
Tch
Tstg
Ratings
50
8
100
200
150
55 to +150
Unit
V
mA
mW
°C
I Electrical Characteristics (Ta = 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time
Turn-off time
Symbol
IDSS
IGSS
VDSS
Vth
RDS(on)
| Yfs |
Ciss
Coss
Crss
ton*
toff*
Conditions
VDS = 10V, VGS = 0
VGS = 8V, VDS = 0
ID = 100
A, V
GS = 0
ID = 100
A, V
DS = VGS
ID = 20mA, VGS = 5V
ID = 20mA, VDS = 5V, f = 1kHz
VDS = 5V, VGS = 0, f = 1MHz
VDD = 5V, VGS = 0 to 5V, RL = 200
VDD = 5V, VGS = 5 to 0V, RL = 200
* ton, toff measurement circuit
min
50
1.5
20
typ
30
10
20
Unit
A
nA
V
mS
pF
ns
max
10
50
3.5
50
15
5
1
1: Gate
JEDEC: TO-236
2: Source
EIAJ: SC-59
3: Drain
Mini3-G1 Package
0.40
+0.10
–0.05
(0.65)
1.50
+0.25 –
0.05
2.8
+0.2 –
0.3
2
1
3
(0.95) (0.95)
1.9±0.1
2.90
+0.20
–0.05
0.16
+0.10
–0.06
0.4
±0.2
5°
10
°
0
to
0.1
1.1
+0.2 –
0.1
1.1
+0.3 –
0.1
Vout
VDD = 5V
VGS = 5V
50
200
100
F
Vin
90%
10%
90%
Vout
ton
toff
Marking Symbol: 3N
Internal Connection
G
D
S
Note) The part number in the parenthesis shows conventional part number.
unit: mm
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en