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參數(shù)資料
| 型號(hào)： | 2SK0663GP |
| 廠商： | PANASONIC CORP |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 30 mA, 55 V, N-CHANNEL, Si, SMALL SIGNAL, JFET |
| 封裝： | ROHS COMPLIANT, SMINI3-F2, 3 PIN |
| 文件頁數(shù)： | 1/4頁 |
| 文件大小： | 204K |
| 代理商： | 2SK0663GP |
Silicon Junction FETs (Small Signal)
1
Publication date: May 2008
SJF00056CED
2SK0663G
Silicon N-channel junction FET
For low-frequency amplification
For switching circuits
■ Features
Low noise figure NF
High gate-drain voltage (source open) VGDO
SMini type package, allowing downsizing of the sets and auto-
matic insertion through the tape/magazine packing
■ Absolute Maximum Ratings Ta = 25°C
Parameter
Symbol
Rating
Unit
Drain-sourse voltage
VDS
55
V
Gate-drain voltage (Source open)
VGDO
55
V
Gate-source voltage (Drain open)
VGSO
55
V
Drain current
ID
30
mA
Gate current
IG
10
mA
Power dissipation
PD
150
mW
Channel temperature
Tch
150
°C
Storage temperature
Tstg
55 to +150
°C
Parameter
Symbol
Conditions
Min
Typ
Max
Unit
Gate-drain surrender voltage
VGDS
IG
= 100 A, VDS = 055
80
V
Drain-source current *
IDSS
VDS = 10 V, VGS = 0
1.0
12.0
mA
Gate-source cutoff current
IGSS
VGS = 30 V, VDS = 0
10
nA
Gate-source cutoff voltage
VGSC
VDS
= 10 V, ID = 10 A
5V
Forward transfer admittance
Yfs
VDS = 10 V, ID = 5 mA, f = 1 kHz
2.5
7.5
mS
Short-circuit forward transfer capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
6.5
pF
(Common source)
Reverse transfer capacitance
Crss
1.9
pF
(Common source)
Noise figure
NF
VDS = 10 V, VGS = 0, f = 100 Hz
2.5
dB
Rg
= 100 k
■ Electrical Characteristics Ta = 25°C ± 3°C
Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors.
2. *: Rank classification
Rank
P
Q
R
IDSS (mA)
1.0 to 3.0
2.0 to 6.5
5.0 to 12.0
Note) The part number in the parenthesis shows conventional part number.
■ Package
Code
SMini3-F2
Pin Name
1: Source
2: Drain
3: Gate
■ Marking Symbol: 2B
Ma
int
en
an
ce
/
Dis
co
nti
nu
ed
Maintenance/Discontinued
includes
following
four
Product
lifecy
cle
stage.
planed
maintenance
type
maintenance
type
planed
discontinued
typed
discontinued
type
Please
visit
following
URL
about
latest
information.
http://panasonic.net/sc/en
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相關(guān)代理商/技術(shù)參數(shù) |
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| 2SK0663GRL | 功能描述:JFET N-CH 55V 30MA SMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> JFET（結(jié)點(diǎn)場效應(yīng) 系列:- 標(biāo)準(zhǔn)包裝:8,000 系列:- 電流 - 漏極(Idss) @ Vds (Vgs=0):1.2mA @ 10V 漏極至源極電壓(Vdss):30V 漏極電流 (Id) - 最大:10mA FET 型:N 溝道 電壓 - 擊穿 (V(BR)GSS):- 電壓 - 切斷 (VGS 關(guān)）@ Id:180mV @ 1µA 輸入電容 (Ciss) @ Vds:4pF @ 10V 電阻 - RDS（開）:200 歐姆 安裝類型:表面貼裝 包裝:帶卷 (TR) 封裝/外殼:3-XFDFN 供應(yīng)商設(shè)備封裝:3-ECSP1006 功率 - 最大:100mW |
| 2SK0664 | 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:For Switching |
| 2SK0664(2SK664) | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:小信號(hào)デバイス － 小信號(hào)FET － MOS FET |
| 2SK066400L | 功能描述:MOSFET N-CH 50V 100MA SMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
| 2SK0664G0L | 功能描述:MOSFET N-CH 50V 100MA SMINI-3 RoHS:是 類別:分離式半導(dǎo)體產(chǎn)品 >> FET - 單 系列:- 標(biāo)準(zhǔn)包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點(diǎn):邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續(xù)漏極(Id) @ 25° C:18A 開態(tài)Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時(shí)的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應(yīng)商設(shè)備封裝:TO-220FP 包裝:管件 |
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