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參數資料
| 型號： | 2SK209-Y |
| 元件分類： | 小信號晶體管 |
| 英文描述： | N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236 |
| 封裝： | 2-3F1B, SC-59, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 133K |
| 代理商： | 2SK209-Y |
2SK209
2003-03-27
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK209
Audio Frequency Low Noise Amplifier Applications
High |Yfs|: |Yfs| = 15 mS (typ.) at VDS = 10 V, VGS = 0
High breakdown voltage: VGDS = 50 V
Low noise: NF = 1.0dB (typ.)
at VDS = 10 V, ID = 0.5 mA, f = 1 kHz, RG = 1 k
High input impedance: IGSS = 1 nA (max) at VGS = 30 V
Small package
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-50
V
Gate current
IG
10
mA
Drain power dissipation
PD
150
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Marking
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14.0
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.2
-1.5
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
4.0
15
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
13
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
3
pF
Noise figure
NF (1)
VDS = 10 V, RG = 1 kW
ID = 0.5 mA, f = 10 Hz
5
dB
Noise figure
NF (2)
VDS = 10 V, RG = 1 kW
ID = 0.5 mA, f = 1 kHz
1
dB
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6.0~14 mA
Unit: mm
JEDEC
TO-236
JEITA
SC-59
TOSHIBA
2-3F1B
Weight: 0.012 g (typ.)
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