- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄371543 > 2SK2101-01MR (FUJI ELECTRIC CO LTD) N-channel MOS-FET PDF資料下載
參數(shù)資料
| 型號(hào)： | 2SK2101-01MR |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | N-channel MOS-FET |
| 中文描述： | 6 A, 800 V, 2.1 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220F15 |
| 封裝： | TO-220F15, 3 PIN |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大小： | 171K |
| 代理商： | 2SK2101-01MR |
2SK2101-01MR
N-channel MOS-FET
FAP-IIA Series
800V
2,1
6A
50W
> Features
-
High Speed Switching
-
Low On-Resistance
-
No Secondary Breakdown
-
Low Driving Power
-
High Voltage
-
V
GS
= ± 30V Guarantee
-
Avalanche Proof
> Outline Drawing
> Applications
-
Switching Regulators
-
UPS
-
DC-DC converters
-
General Purpose Power Amplifier
> Maximum Ratings and Characteristics
-
Absolute Maximum Ratings (T
C
=25°C),
unless otherwise specified
Item
Drain-Source-Voltage
Drain-Gate-Voltage(R
GS
=20K
)
Continous Drain Current
Pulsed Drain Current
Gate-Source-Voltage
Max. Power Dissipation
Operating and Storage Temperature Range
> Equivalent Circuit
Symbol
V
DS
V
DGR
I
D
I
D(puls)
V
GS
P
D
T
ch
T
stg
Rating
Unit
V
V
A
A
V
W
°C
°C
800
800
6
24
±30
50
150
-55 ~ +150
-
Item
Drain-Source Breakdown-Voltage
Gate Threshhold Voltage
Zero Gate Voltage Drain Current
Electrical Characteristics (T
C
=25°C),
unless otherwise specified
Symbol
V
(BR)DSS
V
GS(th)
I
DSS
Test conditions
I
D
=1mA
I
D
=1mA
V
DS
=800V
V
GS
=0V
V
GS
=±30V
I
D
=3A
I
D
=3A
Min.
800
2,5
Typ.
Max.
Unit
V
V
μA
mA
nA
S
pF
pF
pF
ns
ns
ns
ns
A
A
A
V
ns
μC
V
GS
=0V
V
DS=
V
GS
T
ch
=25°C
T
ch
=125°C
V
DS
=0V
V
GS
=10V
V
DS
=25V
V
DS
=25V
V
GS
=0V
f=1MHz
V
CC
=600V
I
D
=5A
V
GS
=10V
R
GS
=10
3,0
10
0,2
10
1,7
6,5
3,5
500
1,0
100
2,1
Gate Source Leakage Current
Drain Source On-State Resistance
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Turn-On-Time t
on
(t
on
=t
d(on)
+t
r
)
I
GSS
R
DS(on)
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
I
AV
I
DR
I
DRM
V
SD
t
rr
Q
rr
3
1200
120
40
25
25
85
45
1800
180
60
40
40
130
70
Turn-Off-Time t
off
(t
on
=t
d(off)
+t
f
)
Avalanche Capability
Continous Reverse Drain Current
Pulsed Reverse Drain Current
Diode Forward On-Voltage
Reverse Recovery Time
Reverse Recovery Charge
L=100μH T
ch
=25°C
T
C
=25°C
T
C
=25°C
I
F
=2xI
DR
V
GS
=0V T
ch
=25°C
I
F
=I
DR
V
GS
=0V
-dI
F
/dt=100A/μs T
ch
=25°C
6
6
24
1,6
1,1
400
1,5
-
Item
Thermal Resistance
Thermal Characteristics
Symbol
R
th(ch-a)
R
th(ch-c)
Test conditions
channel to air
channel to case
Min.
Typ.
Max.
62,5
2,5
Unit
°C/W
°C/W
FUJI ELECTRIC GmbH; Lyoner Strae 26; D-60528 Frankfurt; Tel: 069-66 90 29-0; Fax: 069-66 90 29-56
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 2SK2108 | Very High-Speed Switching Applications |
| 2SK210 | N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS) |
| 2SK211 | N CHANNEL JUNCTION TYPE (FM TUNER, VHF BAND AMPLIFIER APPLICATIONS) |
| 2SK2123 | Silicon N-Channel Power F-MOS FET |
| 2SK2124 | Silicon N-Channel Power F-MOS FET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2SK2102 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 200MA I(D) | SIP |
| 2SK2103 | 制造商:Panasonic Industrial Company 功能描述:TRANSISTOR |
| 2SK2103T100 | 功能描述:MOSFET N-CH 30V 2A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2104 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 60V V(BR)DSS | 5A I(D) | TO-221VAR |
| 2SK2105 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 100V V(BR)DSS | 2A I(D) | TO-252VAR |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。