欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號: 2SK2123
廠商: PANASONIC CORP
元件分類: JFETs
英文描述: Silicon N-Channel Power F-MOS FET
中文描述: 5 A, 450 V, 1.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220E
封裝: TO-220E, 3 PIN
文件頁數(shù): 1/3頁
文件大小: 46K
代理商: 2SK2123
1
Power F-MOS FETs
2SK2123
Silicon N-Channel Power F-MOS FET
unit: mm
I
Features
G
Avalanche energy capacity guaranteed: EAS > 100mJ
G
V
GSS
= ±30V guaranteed
G
High-speed switching: t
f
= 35ns
G
No secondary breakdown
I
Applications
G
Contactless relay
G
Diving circuit for a solenoid
G
Driving circuit for a motor
G
Control equipment
G
Switching power supply
1: Gate
2: Drain
3: Source
TO-220E Package
I
Electrical Characteristics
(T
C
= 25°C)
Parameter
Drain to Source cut-off current
Gate to Source leakage current
Drain to Source breakdown voltage
Gate threshold voltage
Drain to Source ON-resistance
Forward transfer admittance
Diode forward voltage
Input capacitance (Common Source)
Output capacitance (Common Source)
Reverse transfer capacitance (Common Source)
Turn-on time (delay time)
Rise time
Fall time
Turn-off time (delay time)
Thermal resistance between channel and case
Symbol
I
DSS
I
GSS
V
DSS
V
th
R
DS(on)
| Y
fs
|
V
DSF
C
iss
C
oss
C
rss
t
d(on)
t
r
t
f
t
d(off)
R
th(ch-c)
Conditions
V
DS
= 360V, V
GS
= 0
V
GS
= ±30V, V
DS
= 0
I
D
= 1mA, V
GS
= 0
V
DS
= 25V, I
D
= 1mA
V
GS
= 10V, I
D
= 3A
V
DS
= 25V, I
D
= 3A
I
DR
= 5A, V
GS
= 0
V
DS
= 20V, V
GS
= 0, f = 1MHz
V
GS
= 10V, I
D
= 3A
V
DD
= 150V, R
L
= 50
min
450
2
2
typ
1
2.5
700
100
40
25
45
35
80
max
0.1
±1
5
1.3
1.2
2.5
Unit
mA
μ
A
V
V
S
V
pF
pF
pF
ns
ns
ns
ns
°C/W
I
Absolute Maximum Ratings
(T
C
= 25°C)
Parameter
Drain to Source breakdown voltage
Gate to Source voltage
Drain current
Avalanche energy capacity
Allowable power
dissipation
Channel temperature
Storage temperature
DC
Pulse
T
C
= 25°C
Ta = 25°C
Symbol
V
DSS
V
GSS
I
D
I
DP
EAS
*
P
D
T
ch
T
stg
Ratings
450
±30
±5
±15
100
50
2
150
55 to +150
Unit
V
V
A
A
mJ
W
°C
°C
*
L = 8mH, I
L
= 5A, V
DD
= 50V, 1 pulse
9.9±0.3
2
3
1
4.6±0.2
2.9±0.2
2.6±0.1
2.54±0.2
5.08±0.4
0.75±0.1
1.2±0.15
1.45±0.15
1
1
+
φ
3.2±0.1
3
8
4
S
0.7±0.1
7
相關(guān)PDF資料
PDF描述
2SK2124 Silicon N-Channel Power F-MOS FET
2SK2125 Silicon N-Channel Power F-MOS FET
2SK2126 Silicon N-Channel Power F-MOS FET
2SK2128 Silicon N-Channel Power F-MOS FET
2SK2129 Silicon N-Channel Power F-MOS FET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2124 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET
2SK2125 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET
2SK2126 制造商:PANASONIC 制造商全稱:Panasonic Semiconductor 功能描述:Silicon N-Channel Power F-MOS FET
2SK2126001MC 制造商:Panasonic Industrial Company 功能描述:
2SK2127 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
主站蜘蛛池模板: 深水埗区| 米脂县| 青海省| 宣城市| 修文县| 电白县| 玉门市| 南岸区| 定边县| 谢通门县| 美姑县| 临澧县| 东台市| 元氏县| 正蓝旗| 绿春县| 安丘市| 金山区| 玉门市| 庆安县| 织金县| 翁牛特旗| 云南省| 阳原县| 宁陵县| 正宁县| 昌图县| 南城县| 称多县| 永年县| 大宁县| 龙南县| 莱芜市| 绿春县| 巴南区| 威海市| 溧阳市| 靖州| 界首市| 温州市| 西乌珠穆沁旗|