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參數資料
| 型號： | 2SK2347 |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 1000 V, 0.8 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3JML |
| 封裝： | TO-3JML, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 55K |
| 代理商： | 2SK2347 |
Ordering number : EN5424A
SANYO Electric Co.,Ltd. Semiconductor Bussiness Headquarters
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110 JAPAN
72597TS (KOTO) TA-1033 No.5424-1/4
Package Dimensions
unit: mm
2131-TO-3JML
[2SK2347]
SANYO: TO-3JML
1 : Gate
2 : Drain
3 : Source
Specifications
Absolute Maximum Ratings at Ta=25°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
1000
V
Gate-to-Source Voltage
VGSS
±30
V
Drain Current (DC)
ID
20
A
Drain Current (pulse)
IDP
PW
≤10s, duty cycle≤1%
40
A
Allowable Power Dissipation
PD
4.6
W
Tc=25°C
160
W
Channel Temperature
Tch
150
°C
Storage temperature
Tstg
–55 to +150
°C
Electrical Characteristics at Ta=25°C
Parameter
Symbol
Conditions
Ratings
min
typ
max
Unit
D-S Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
1000
V
Zero-Gate Voltage Drain Current IDSS
VDS=1000V, VGS=0
1.0
mA
Gate-to Source Leak Current
IGSS
VGS=±30V, VDS=0
±100
nA
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
1.5
3.5
V
Forward Transfer Admittance
|yfs|VDS=20V, ID=10A
5.0
10
S
Static Drain-to-Source
RDS(on)
ID=10A, VGS=10V
0.6
0.8
ON-State Resistance
Input Capacitance
Ciss
VDS=20V, f=1MHz
3300
pF
Output Capacitance
Coss
VDS=20V, f=1MHz
750
pF
Reverse Transfer Capacitance
Crss
VDS=20V, f=1MHz
500
pF
Continued on next page.
Features
Low ON resistance, ultrahigh-speed switching.
High reliability (Adoption of HVP process).
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