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參數資料
型號: 2SK246-Y
元件分類: 小信號晶體管
英文描述: N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-92
封裝: 2-5F1C, SC-43, 3 PIN
文件頁數: 1/4頁
文件大小: 107K
代理商: 2SK246-Y
2SK246
2003-03-25
1
TOSHIBA Field Effect Transistor
Silicon N Channel Junction Type
2SK246
For Constant Current, Impedance
Converter and DC-AC High Input
Impedance Amplifier Circuit Applications
High breakdown voltage: VGDS = 50 V
High input impedance: IGSS = 1 nA (max) (VGS = 30 V)
Maximum Ratings (Ta
==== 25°C)
Characteristics
Symbol
Rating
Unit
Gate-drain voltage
VGDS
-50
V
Gate current
IG
10
mA
Drain power dissipation
PD
300
mW
Junction temperature
Tj
125
°C
Storage temperature range
Tstg
-55~125
°C
Electrical Characteristics (Ta
==== 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate cut-off current
IGSS
VGS = -30 V, VDS = 0
-1.0
nA
Gate-drain breakdown voltage
V (BR) GDS
VDS = 0, IG = -100 mA
-50
V
Drain current
IDSS
(Note)
VDS = 10 V, VGS = 0
1.2
14
mA
Gate-source cut-off voltage
VGS (OFF)
VDS = 10 V, ID = 0.1 mA
-0.7
-6.0
V
Forward transfer admittance
Yfs
VDS = 10 V, VGS = 0, f = 1 kHz
1.5
mS
Input capacitance
Ciss
VDS = 10 V, VGS = 0, f = 1 MHz
9.0
pF
Reverse transfer capacitance
Crss
VDG = 10 V, ID = 0, f = 1 MHz
2.5
pF
Note: IDSS classification Y: 1.2~3.0 mA, GR: 2.6~6.5 mA, BL: 6~14 mA
Unit: mm
JEDEC
TO-92
JEITA
SC-43
TOSHIBA
2-5F1C
Weight: 0.21 g (typ.)
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相關代理商/技術參數
參數描述
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