欧美成人免费电影,国产欧美一区二区三区精品酒店,精品国产a毛片,色网在线免费观看

參數(shù)資料
型號(hào): 2SK2493(2-7J1B)
元件分類: JFETs
英文描述: 5 A, 16 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: LEAD FREE, 2-7J1B, 3 PIN
文件頁(yè)數(shù): 1/6頁(yè)
文件大小: 383K
代理商: 2SK2493(2-7J1B)
2SK2493
2010-02-05
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2493
Chopper Regulator and DCDC Converter Applications
2.5-V gate drive
Low drainsource ON resistance
: RDS (ON) = 0.08 m (typ.)
High forward transfer admittance
: |Yfs| = 8.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 16 V)
Enhancement mode
: Vth = 0.5 to 1.1 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
16
V
Draingate voltage (RGS = 20 k)
VDGR
16
V
Gatesource voltage
VGSS
±8
V
DC (Note 1)
ID
5
A
Drain current
Pulse (Note 1)
IDP
20
A
Drain power dissipation (Tc = 25°C)
PD
20
W
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in temperature,
etc.) may cause this product to decrease in the reliability significantly even
if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please
design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and estimated failure
rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
6.25
°C / W
Thermal resistance, channel to ambient
Rth (cha)
125
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
1.1
± 0.2
0.1
±
0.
1
1.05 MAX.
2.3
± 0.15
5.2
± 0.2
0.8 MAX.
0.6 MAX.
9.
5
±
0.3
1.
2
MA
X
.
1.
5
±
0.2
6.5
± 0.2
1
2
3
0.6 MAX.
5.5
±
0.
2
0.6
± 0.15
2.3
±
0.
2
2.3
± 0.15
1. GATE
2. DRAIN
HEAT SINK)
3. SOURSE
3
2
1
JEDEC
JEITA
TOSHIBA
2-7J1B
Weight: 0.36 g (typ.)
相關(guān)PDF資料
PDF描述
2SK2498 50 A, 60 V, 0.014 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2541 100 mA, 50 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET
2SK2550 45 A, 50 V, 0.03 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2568 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET
2SK2598(TO-220FL) 13 A, 250 V, 0.25 ohm, N-CHANNEL, Si, POWER, MOSFET
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
2SK2494-01 制造商:FUJI 制造商全稱:Fuji Electric 功能描述:N-channel MOS-FET
2SK2495 制造商:未知廠家 制造商全稱:未知廠家 功能描述:
2SK2496 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
2SK2497 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:N CHANNEL SINGLE GATE MODULATION DOPE TYPE (SHF BAND LOW NOISE AMPLIFIER APPLICATIONS)
2SK2498 制造商:NEC 制造商全稱:NEC 功能描述:SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE
主站蜘蛛池模板: 镇坪县| 翁源县| 巴青县| 册亨县| 湖口县| 车致| 浏阳市| 正安县| 鄂托克前旗| 武隆县| 汶川县| 瑞丽市| 长寿区| 潢川县| 来安县| 金门县| 张北县| 平江县| 高邮市| 桑日县| 株洲县| 临泽县| 邹城市| 石林| 赤壁市| 谢通门县| 赣榆县| 通许县| 天等县| 房山区| 抚顺市| 福建省| 琼海市| 衡阳县| 东明县| 青田县| 阿鲁科尔沁旗| 曲沃县| 涿州市| 天水市| 昌都县|