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參數資料
| 型號： | 2SK2539-8 |
| 英文描述： | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 中文描述： | 晶體管|場效應| N溝道| 25mA電流我（直）|的SOT - 346 |
| 文件頁數： | 4/9頁 |
| 文件大小： | 48K |
| 代理商： | 2SK2539-8 |
2SK2553
4
100
75
50
25
0
C
50
100
150
200
Case Temperature Tc (°C)
Power vs. Temperature Derating
Drain to Source Voltage V (V)
D
D
Maximum Safe Operation Area
500
200
100
20
50
10
2
1
5
0.5
0.1
0.3
1
3
10
30
100
Operation in
this area is
limited by R
DS(on)
Ta = 25 °C
10μs
100μs
1ms
DCOpeaion(T =25C
3
1
0.3
0.1
0.03
0.01
10 μ
100 μ
1 m
10 m
Pulse Width PW (S)
N
100 m
1
10
s
γ
DM
P
PW
T
D =T
ch – c = 1.67 °C/W, Tc = 25 °C
θ γ θ
θ
Tc = 25°C
D = 1
0.5
0.2
0.1
0.05
0.02
0.01
Normalized Transient Thermal Impedance vs. Pulse Width
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2552 | 2SK2552 Data Sheet | Data Sheet[01/2002] |
| 2SK2555 | |
| 2SK2556 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
| 2SK2557 | |
| 2SK2572 | Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2541 | 制造商:NEC 制造商全稱:NEC 功能描述:N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING |
| 2SK2541-A | 制造商:Renesas Electronics Corporation 功能描述:Trans MOSFET N-CH 50V 0.1A 3-Pin |
| 2SK2542 | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2542(F) | 功能描述:MOSFET N-Ch 500V 8A Rdson 0.85 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2542_06 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type Switching Regulator Applications |
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