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參數資料

2SK2553(L), 2SK2553(S)

Silicon N Channel MOS FET

High Speed Power Switching

ADE-208-357H (Z)

9th. Edition

Feb. 1999

Application

High speed power switching

Features

Low on-resistance

DS(on)

= 7 m

typ.

High speed switching

4 V gate drive device can be driven from 5 V source

Outline

LDPAK

1. Gate

2. Drain

3. Source

4. Drain

相關PDF資料	PDF描述
2SK2553(S)
2SK2513-Z	Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK2516-01
2SK2517-01	Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset
2SK2539-6	Low-Power, Single-/Dual-Level Battery Monitors with Hysteresis and Integrated µP Reset

相關代理商/技術參數	參數描述
2SK2553-L-E	制造商:Renesas Electronics Corporation 功能描述:
2SK2553L-E	制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK2553S	制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK2553STL-E	制造商:RENESAS 制造商全稱:Renesas Technology Corp 功能描述:Silicon N Channel MOS FET High Speed Power Switching
2SK2554	制造商:Renesas Electronics 功能描述:Trans MOSFET N-CH 60V 75A 3-Pin(3+Tab) TO-3P Cut Tape

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