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參數資料
| 型號： | 2SK2595AX |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | RP8P-2 |
| 文件頁數： | 1/14頁 |
| 文件大小： | 159K |
| 代理商： | 2SK2595AX |
Rev.3.00, Aug.26.2004, page 1 of 13
2SK2595
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0206-0300
Rev.3.00
Aug.26.2004
Features
High power output, High gain, High efficiency
PG = 7.8 dB, Pout = 5.37 W,
ηD = 50% min. (f = 836.5 MHz)
Compact package capable of surface mounting
Outline
1
2
3
RP8P
1. Gate
2. Source
3. Drain
D
G
S
Note:
Marking is "AX".
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25°C)
Item
Symbol
Ratings
Unit
Drain to source voltage
VDSS
17
V
Gate to source voltage
VGSS
±10
V
Drain current
ID
1.1
A
Drain peak current
ID(pulse)
Note1
5A
Channel dissipation
Pch
Note2
20
W
Channel temperature
Tch
150
°C
Storage temperature
Tstg
– 45 to +150
°C
Notes: 1. PW
≤ 10 s, duty cycle ≤ 1%
2. Value at Tc = 25
°C
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