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參數資料
| 型號： | 2SK2608 |
| 元件分類： | JFETs |
| 英文描述： | 3 A, 900 V, 4.3 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 封裝： | LEAD FREE, 2-10P1B, SC-46, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 414K |
| 代理商： | 2SK2608 |
2SK2608
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSIII)
2SK2608
Switching Regulator Applications
Low drainsource ON resistance
: RDS (ON) = 3.73 (typ.)
High forward transfer admittance
: |Yfs|= 2.6 S (typ.)
Low leakage current
: IDSS = 100 A (max) (VDS = 720 V)
Enhancement mode
: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
900
V
Draingate voltage (RGS = 20 k)
VDGR
900
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
3
A
Drain current
Pulse (Note 1)
IDP
9
A
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
295
mJ
Avalanche current
IAR
3
A
Repetitive avalanche energy (Note 3)
EAR
10.0
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 60.0 mH, RG = 25 , IAR = 3 A
Note 3: Repetitive rating: pulse width limited by maximum channel temperature
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
TO-220AB
JEITA
SC-46
TOSHIBA
2-10P1B
Weight: 2.0 g (typ.)
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| 2SK2614(2-7B2B) | 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET |
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2608(F) | 制造商:Toshiba 功能描述:Nch 900V 3A 4.3@10V TO220AB Bulk |
| 2SK2610 | 功能描述:MOSFET N-CH 900V 5A TO-3PN RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK2610(F) | 制造商:Toshiba 功能描述:Nch 900V 5A 2.5@10V TO3P(N) 制造商:Toshiba 功能描述:Nch 900V 5A 2.5@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P 制造商:Toshiba 功能描述:Trans MOSFET N-CH 900V 5A 3-Pin(3+Tab) TO-3PN |
| 2SK2610(F,T) | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 5A 3PIN TO-3P(N) - Rail/Tube 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 900V 5A TO-3PN |
| 2SK2610 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P |
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