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參數資料
| 型號： | 2SK2611 |
| 元件分類： | JFETs |
| 英文描述： | 9 A, 900 V, 1.4 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ROHS COMPLIANT, 2-16C1B, SC-65, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 415K |
| 代理商： | 2SK2611 |
2SK2611
2010-01-29
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSIII)
2SK2611
DCDC Converter, Relay Drive and Motor Drive
Applications
Low drainsource ON-resistance
: RDS (ON) = 1.2 (typ.)
High forward transfer admittance
: |Yfs| = 7.0 S (typ.)
Low leakage current
: IDSS = 100 μA (max) (VDS = 720 V)
Enhancementmode
: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)
Absolute Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
900
V
Draingate voltage (RGS = 20 k)
VDGR
900
V
Gatesource voltage
VGSS
±30
V
DC
(Note 1)
ID
9
A
Drain current
Pulse (Note 1)
IDP
27
A
Drain power dissipation (Tc = 25°C)
PD
150
W
Single pulse avalanche energy
(Note 2)
EAS
663
mJ
Avalanche current
IAR
9
A
Repetitive avalanche energy (Note 3)
EAR
15
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55 to 150
°C
Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the absolute maximum ratings. Please design the appropriate
reliability upon reviewing the Toshiba Semiconductor Reliability Handbook (“Handling Precautions”/“Derating Concept and
Methods”) and individual reliability data (i.e. reliability test report and estimated failure rate, etc).
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
0.833
°C / W
Thermal resistance, channel to ambient
Rth (cha)
50
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 15 mH, RG = 25 , IAR = 9 A
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
1. GATE
2. DRAIN (HEAT SINK)
3. SOURCE
JEDEC
―
JEITA
SC-65
TOSHIBA
2-16C1B
Weight: 4.6 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2614(2-7B2B) | 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2614(2-7B2B) | 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2614(2-7B1B) | 20 A, 50 V, 0.046 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2618ALS | 6.5 A, 500 V, 1.25 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-220AB |
| 2SK2621 | 12 A, 500 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET, TO-3PB |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2611(F) | 制造商:Toshiba 功能描述:Nch 900V 9A 1.4@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, TO-3P |
| 2SK2611(F,T) | 功能描述:MOSFET MOSFET N-Ch 900V 9A Rdson 1.4 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2611 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P |
| 2SK2611T | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 900V 9A 3PIN TO-3P(N) - Rail/Tube |
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