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參數資料
| 型號： | 2SK2596 |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | Silicon N-Channel MOS FET UHF Power Amplifier |
| 中文描述： | 硅N溝道場效應晶體管超高頻功率放大器 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 68K |
| 代理商： | 2SK2596 |
Rev.3.00, Feb.14.2005, page 1 of 4
2SK2596
Silicon N-Channel MOS FET
UHF Power Amplifier
REJ03G0207-0300
(Previous ADE-208-1367(Z))
Rev.3.00
Feb.14.2005
Features
High power output, High gain, High efficiency
PG = 12.2 dB, Pout = 30.2 dBm,
η
D = 45%min. (f = 836.5 MHz)
Compact package capable of surface mounting
Outline
1
2
3
4
PLZZ0004CA-A
(Previous
code
:
UPAK)
1.
Gate
2.
Source
3.
Drain
4.
Source
D
G
S
Note: Marking is “BX“.
This Device is sensitive to Electro Static Discharge. An Adequate handling procedure is requested.
Absolute Maximum Ratings
(Ta = 25°C)
Unit
V
V
A
A
W
°C
°C
Item
Symbol
V
DSS
V
GSS
I
D
I
D(pulse)
Note1
Pch
Note2
Tch
Tstg
Ratings
17
±10
0.4
1
3
150
–45 to +150
Drain to source voltage
Gate to source voltage
Drain current
Drain peak current
Channel dissipation
Channel temperature
Storage temperature
Notes: 1. PW
≤
10
μ
s, duty cycle
≤
1%
2. Value at Tc = 25°C
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