型號: | 2SK2601 |
廠商: | Toshiba Corporation |
元件分類: | DC/DC變換器 |
英文描述: | N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) |
中文描述: | N通道馬鞍山型(高速,高壓開關,DC - DC變換器,繼電器驅動器和電機驅動應用) |
文件頁數: | 1/5頁 |
文件大小: | 288K |
代理商: | 2SK2601 |
相關PDF資料 |
PDF描述 |
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2SK2602 | Isolated Flyback Switching Regulator with 9V Output |
2SK2603 | N CHANNEL MOS TYPE (HIGH SPEED, HIGH VOLTAGE SWITCHING, CHOPPER REGULATOR, DC-DC CONVERTER AND MOTOR DRIVE APPLICATIONS) |
2SK2604 | N CHANNEL MOS TYPE (HGIH SPEED, HIGH VOLTAGE SWITCHIN, SWITCHING REGULATOR APPLICATIONS) |
2SK2605 | Aluminum Electrolytic Radial Lead Low Leakage Capacitor; Capacitance: 470uF; Voltage: 16V; Case Size: 10x20 mm; Packaging: Bulk |
2SK2606 | N CHANNEL MOS TYPE (DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) |
相關代理商/技術參數 |
參數描述 |
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2SK2601(F) | 制造商:Toshiba 功能描述:Nch 500V 10A 1@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 500V 10A TO-3PN |
2SK2602 | 功能描述:MOSFET N-CH 600V 6A TO-3PN RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道,金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds(最大)@ Id, Vgs @ 25° C:180 毫歐 @ 9A,10V Id 時的 Vgs(th)(最大):4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
2SK2602(F,T) | 功能描述:MOSFET MOSFET N-Ch 600V 6A Rdson 1.25 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
2SK2603 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 800V 3A 3PIN TO-220 - Rail/Tube |
2SK2603(F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 800V 3A TO-220AB |