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參數資料
| 型號： | 2SK2606 |
| 廠商： | Toshiba Corporation |
| 元件分類： | DC/DC變換器 |
| 英文描述： | N CHANNEL MOS TYPE (DC-DC CONVERTER, RELAY DRIVE AND MOTOR DRIVE APPLICATIONS) |
| 中文描述： | N通道馬鞍山型（DC - DC變換器，繼電器驅動器和電機驅動應用） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 162K |
| 代理商： | 2SK2606 |
2SK2606
2002-06-27
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
MOSIII)
2SK2606
DC
DC Converter, Relay Drive and Motor Drive
Applications
Low drain
source ON resistance
High forward transfer admittance
Low leakage current
: I
DSS
=
1
00 μA (max) (V
DS
= 640 V)
Enhancement
mode
: V
th
= 2.0~4.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Ta = 25°C)
: R
DS
(ON)
=
1
.0
(typ.)
: |Y
fs
|
=
7.0 S (typ.)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
800
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
800
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
8
A
Drain current
Pulse (Note 1)
I
DP
24
A
Drain power dissipation (Tc = 25°C)
P
D
85
W
Single pulse avalanche energy
(Note 2)
E
AS
883
mJ
Avalanche current
I
AR
8
A
Repetitive avalanche energy (Note 3)
E
AR
8.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
R
th (ch
c)
1.47
°C / W
Thermal resistance, channel to
ambient
R
th (ch
a)
41.6
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD
= 90 V, T
ch
= 25°C (initial), L = 25.0 mH, I
AR
= 8 A, R
G
= 25
Note 3: Repetitive rating: Pulse width limited by maximum channel temperature
This transistor is an electrostatic sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-16F1B
Weight: 5.8 g (typ.)
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相關代理商/技術參數 |
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| 2SK2606(F) | 功能描述:MOSFET MOSFET N-Ch 800V 8A Rdson 1.2 Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2607 | 功能描述:MOSFET N-CH 800V 9A TO-3PN RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK2607(F) | 制造商:Toshiba 功能描述:Nch 800V 9A 1.2@10V TO3P(N) Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, TO-3P 制造商:Toshiba America Electronic Components 功能描述:MOSFET, N, TO-3P; Transistor Polarity:N Channel; Continuous Drain Current Id:9A; Drain Source Voltage Vds:800V; On Resistance Rds(on):1.2ohm; Rds(on) Test Voltage Vgs:10V; Threshold Voltage Vgs Typ:4V; Power Dissipation Pd:150W ;RoHS Compliant: Yes 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,800V/9A/1.2ohm,TO-3P(N) |
| 2SK2607(F,T) | 功能描述:MOSFET N-Ch FET RDS 1.0 Ohm IDSS 100uA VDS 640V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| 2SK2607 | 制造商:Toshiba America Electronic Components 功能描述:MOSFET N TO-3P |
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