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參數資料
型號: 2SK2775
元件分類: JFETs
英文描述: 25 A, 100 V, 0.11 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝: ZP, 3 PIN
文件頁數: 1/4頁
文件大小: 52K
代理商: 2SK2775
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft’s
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges,or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
Ultrahigh-Speed Switching Applications
Ordering number:ENN6392
2SK2775
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
60800TS (KOTO) TA-2760 No.6392–1/4
6.2
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Specifications
Absolute Maximum Ratings at Ta = 25C
Package Dimensions
unit:mm
2128
[2SK2775]
Features
Low ON resistance.
Ultrahigh-speed switching.
4V drive.
Enables simplified fabrication, high-density mount-
ing, and miniaturization in end products due to the
surface mountable package.
C
Electrical Characteristics at Ta = 25C
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
(Bottom view)
Continued on next page.
Tc=25°C
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PW≤10μs, duty cycle≤1%
相關PDF資料
PDF描述
2SK2776(2-10S1B) 8 A, 500 V, 0.85 ohm, N-CHANNEL, Si, POWER, MOSFET
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相關代理商/技術參數
參數描述
2SK2776(Q) 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson=0.85Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2776(TE24L,Q) 功能描述:MOSFET MOSFET N-Ch 500V 8A Rdson=0.85Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
2SK2776-SM(Q) 制造商:Toshiba America Electronic Components 功能描述:
2SK2777(Q) 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 6A 3-Pin(3+Tab) TO-220FL 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO220FL
2SK2777(SM,Q) 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 6A TO220SM
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