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參數資料
| 型號： | 2SK2864 |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 200 V, 0.12 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | ZP, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 28K |
| 代理商： | 2SK2864 |
2SK2864
No.6610-1/4
Features
Low ON-resistance.
Ultrahigh-speed switching.
Enables simplified fabrication, high-density mounting,
and miniaturization in end products due to the surface
mountable package.
Specifications
Absolute Maximum Ratings at Ta=25
°C
Parameter
Symbol
Conditions
Ratings
Unit
Drain-to-Source Voltage
VDSS
200
V
Gate-to-Source Voltage
VGSS
±20
V
Drain Current (DC)
ID
20
A
Drain Current (Pulse)
IDP
PW
≤10s, duty cycle≤1%
80
A
Allowable Power Dissipation
PD
Tc=25
°C50
W
Channel Temperature
Tch
150
°C
Storage Temperature
Tstg
--55 to +150
°C
Electrical Characteristics at Ta=25
°C
Ratings
Parameter
Symbol
Conditions
min
typ
max
Unit
Drain-to-Source Breakdown Voltage
V(BR)DSS
ID=1mA, VGS=0
200
V
Gate-to-Source Breakdown Voltage
V(BR)GSS
IG=±100A, VDS=0
±20
V
Zero-Gate Voltage Drain Current
IDSS
VDS=200V, VGS=0
100
A
Gate-to-Source Leakage Current
IGSS
VGS=±16V, VDS=0
±10
A
Cutoff Voltage
VGS(off)
VDS=10V, ID=1mA
2.0
4.0
V
Forward Transfer Admittance
yfs
VDS=10V, ID=10A
6
10
S
Static Drain-to-Source On-State Resistance
RDS(on)
ID=10A, VGS=10V
90
120
m
Continued on next page.
SANYO Electric Co.,Ltd. Semiconductor Company
TOKYO OFFICE Tokyo Bldg., 1-10, 1 Chome, Ueno, Taito-ku, TOKYO, 110-8534 JAPAN
Ordering number : ENN6610
2SK2864
Package Dimensions
unit : mm
2128
[2SK2864]
13001 TS IM TA-3092
Any and all SANYO products described or contained herein do not have specifications that can handle
applications that require extremely high levels of reliability, such as life-support systems, aircraft's
control systems, or other applications whose failure can be reasonably expected to result in serious
physical and/or material damage. Consult with your SANYO representative nearest you before using
any SANYO products described or contained herein in such applications.
SANYO assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other
parameters) listed in products specifications of any and all SANYO products described or contained
herein.
N-Channel Silicon MOSFET
1 : Gate
2 : Source
3 : Drain
SANYO : ZP
6.2
7.8
8.2
0.2
0.4
4.2
1.0
5.08
2.54
8.4 10.0
1.2
0.3
0.6
0.7
7.8
5.2
6.2
10.0
6.0
2.5
1
2
3
Ultrahigh-Speed Switching Applications
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PDF描述 |
|---|---|
| 2SK2865(2-7B2B) | 2 A, 600 V, 5 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2869(L) | 0.07 ohm, POWER, FET |
| 2SK2869(L) | 0.07 ohm, POWER, FET |
| 2SK2884 | 5 A, 800 V, 2.2 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2885(S) | 0.025 ohm, POWER, FET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2864-TL-E | 制造商:SANYO Semiconductor Co Ltd 功能描述:Cut Tape 制造商:SANYO Semiconductor Co Ltd 功能描述:MOSFET N CH 200V 20A ZP |
| 2SK2865(Q) | 制造商:Toshiba 功能描述:Nch 600V 2A 5@10V PW-Mold Bulk 制造商:Toshiba 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) New PW-Mold |
| 2SK2865(TE16L1,NQ) | 制造商:Toshiba America Electronic Components 功能描述: 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 600V 2A PW-MOLD 制造商:Toshiba America Electronic Components 功能描述:Trans MOSFET N-CH 600V 2A 3-Pin(2+Tab) New PW-Mold T/R |
| 2SK2865TE16L1NQ | 制造商:Toshiba America Electronic Components 功能描述:POWER MOSFETS |
| 2SK2866 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 10A 3PIN TO-220 - Rail/Tube |
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