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參數資料
| 型號： | 2SK2973 |
| 廠商： | Mitsubishi Electric Corporation |
| 英文描述： | RF POWER MOS FET(VHF/UHF power amplifiers) |
| 中文描述： | 射頻功率MOS FET（甚高頻/超高頻功率放大器） |
| 文件頁數： | 1/3頁 |
| 文件大小： | 33K |
| 代理商： | 2SK2973 |
2SK2973
MITSUBISHI RF POWER MOS FET
Nov. ′97
DESCRIPTION
2SK2973 is a MOS FET type transistor specifically designed for
VHF/UHF power amplifiers applications.
FEATURES
High power gain:Gpe
≥
13dB
@V
DD
=9.6V,f=450MHz,Pin=17dBm
High efficiency:55% typ.
Source case type SOT-89 package
(connected internally to source)
APPLICATION
For drive stage and output stage of power amplifiers in VHF/UHF
band portable radio sets.
OUTLINE DRAWING
Dimensions in mm
MARKING
1 : DRAIN
2 : SOURCE
3 : GATE
MARKING
Typ
Max
10
1
1.8
Min
Limits
Parameter
Test conditions
Symbol
V
DSS
V
GSS
P
ch
T
j
T
stg
Note1: Above parameters are guaranteed independently.
2: Solder on printed board(Copper leaf area;70
×
70mm,t=1.6mm Epoxy glass)
Parameter
Ratings
17
±10
1.5
150
Unit
V
V
W
C
C
Drain to source voltage
Gate to source voltage
Channel dissipation
Junction temperature
Storage temperature
-40 to +110
ABSOLUTE MAXIMUM RATINGS
(T
C
=25C, unless otherwise noted)
ELECTRICAL CHARACTERISTICS
(T
C
=25C, unless otherwise noted)
Symbol
Unit
I
DSS
I
GSS
V
TH
C
iss
C
oss
P
out
h
D
Threshold voltage
Note: Above parameters,ratings,limits and conditions are subject to change.
V
DS
=12V, V
GS
=0V
V
GS
=10V, V
DS
=0V
V
DS
=7V, I
DS
=1mA
V
GS
=10V, V
DS
=0V,f=1MHz
V
DS
=10V, V
GS
=0V,f=1MHz
55
μA
μA
V
pF
pF
W
%
1.2
V
DS
=9.6V, P
in
=50mW,f=450MHz
1
45
1.2
8
10
Conditions
Tc=25C
SOT-89
2
3
4.6MAX
1.5±0.1
1.6±0.2
0.48MAX
1
1.5
0.53
MAX
0.4-0.05
3.0
TYPE No.
LOT No.
K1
(Note2)
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