- 您現在的位置：買賣IC網 > PDF目錄33493 > 2SK2993(2-10S1B) 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET PDF資料下載
參數資料
| 型號： | 2SK2993(2-10S1B) |
| 元件分類： | JFETs |
| 英文描述： | 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | LEAD FREE, 2-10S1B, 3 PIN |
| 文件頁數： | 1/6頁 |
| 文件大小： | 440K |
| 代理商： | 2SK2993(2-10S1B) |
2SK2993
2004-07-06
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (πMOSV)
2SK2993
Chopper Regulator, DCDC Converter and Motor Drive
Applications
Low drainsource ON resistance
: RDS (ON) = 82 m (typ.)
High forward transfer admittance
: |Yfs| = 20 S (typ.)
Low leakage current : IDSS = 100 A (max) (VDS = 250 V)
Enhancement mode
: Vth = 1.5~3.5 V (VDS = 10 V, ID = 1 mA)
Maximum Ratings (Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drainsource voltage
VDSS
250
V
Draingate voltage (RGS = 20 k)
VDGR
250
V
Gatesource voltage
VGSS
±20
V
DC
(Note 1)
ID
20
Drain current
Pulse (Note 1)
IDP
60
A
Drain power dissipation (Tc = 25°C)
PD
100
W
Single pulse avalanche energy
(Note 2)
EAS
423
mJ
Avalanche current
IAR
20
A
Repetitive avalanche energy (Note 3)
EAR
10
mJ
Channel temperature
Tch
150
°C
Storage temperature range
Tstg
55~150
°C
Thermal Characteristics
Characteristics
Symbol
Max
Unit
Thermal resistance, channel to case
Rth (chc)
1.25
°C / W
Thermal resistance, channel to
ambient
Rth (cha)
83.3
°C / W
Note 1: Ensure that the channel temperature does not exceed 150°C.
Note 2: VDD = 90 V, Tch = 25°C (initial), L = 1.79 mH, IAR = 20 A,
RG = 25
Note 3: Repetitive rating: pulse width limited by maximum channel
temperature.
This transistor is an electrostatic-sensitive device.
Please handle with caution.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-10S1B
Weight: 1.5 g (typ.)
JEDEC
―
JEITA
―
TOSHIBA
2-10S2B
Weight: 1.5 g (typ.)
相關PDF資料 |
PDF描述 |
|---|---|
| 2SK2993(2-10S1B) | 20 A, 250 V, 0.105 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2996 | 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK2998 | 500 mA, 500 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92 |
| 2SK3012 | 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 2SK3013 | 16 A, 600 V, 0.6 ohm, N-CHANNEL, Si, POWER, MOSFET |
相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK2993-SM(Q) | 制造商:Toshiba America Electronic Components 功能描述: |
| 2SK2993TE24L | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 250V 20A 3PIN TO-220FL/SM - Tape and Reel |
| 2SK2995 | 功能描述:MOSFET N-CH 250V 30A TO-3PN RoHS:否 類別:分離式半導體產品 >> FET - 單 系列:- 標準包裝:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金屬氧化物 FET 特點:邏輯電平門 漏極至源極電壓(Vdss):200V 電流 - 連續漏極(Id) @ 25° C:18A 開態Rds（最大）@ Id, Vgs @ 25° C:180 毫歐 @ 9A，10V Id 時的 Vgs(th)（最大）:4V @ 250µA 閘電荷(Qg) @ Vgs:72nC @ 10V 輸入電容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安裝類型:通孔 封裝/外殼:TO-220-3 整包 供應商設備封裝:TO-220FP 包裝:管件 |
| 2SK2995(F) | 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N)IS 制造商:Toshiba 功能描述:Nch 250V 30A 0.068@10V TO3P(N)IS Bulk 制造商:Toshiba America Electronic Components 功能描述:MOSFET N-CH 250V 30A TO-3PN 制造商:Toshiba America Electronic Components 功能描述:MOSFET,Nch,250V/30A/0.068ohm,TO-3P(N)IS 制造商:Toshiba 功能描述:Trans MOSFET N-CH 250V 30A 3-Pin(3+Tab) TO-3P |
| 2SK2996 | 制造商:Toshiba America Electronic Components 功能描述:TRANS MOSFET N-CH 600V 10A 3PIN TO-220(NIS) - Rail/Tube 制造商:Panasonic Industrial Company 功能描述:SUB ONLY TRANSISTOR SUB:B1DEGR |
發布緊急采購，3分鐘左右您將得到回復。