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參數資料
| 型號： | 2SK3067 |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場效應晶體管硅?頻道馬鞍山類型 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 127K |
| 代理商： | 2SK3067 |
2SK3067
2002-06-05
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (
π
MOSV)
2SK3067
Chopper Regulator, DC
DC Converter and Motor Drive
Applications
Low drain
source ON resistance
High forward transfer admittance
Low leakage current
: I
DSS
=
1
00 μA (max) (V
DS
= 600 V)
Enhancement
mode
: V
th
= 2.0~4.0 V (V
DS
=
1
0 V, I
D
=
1
mA)
Maximum Ratings
(Tc = 25°C)
: R
DS (ON)
= 4.2
(typ.)
: |Y
fs
| =
1
.7 S (typ.)
Characteristics
Symbol
Rating
Unit
Drain
source voltage
V
DSS
600
V
Drain
gate voltage (R
GS
= 20 k
)
V
DGR
600
V
Gate
source voltage
V
GSS
±30
V
DC
(Note 1)
I
D
2
A
Pulse (t = 1 ms)
(Note 1)
I
DP
5
A
Drain current
Pulse (t = 100 μs)
(Note 1)
I
DP
8
A
Drain power dissipation
P
D
25
W
Single pulse avalanche energy
(Note 2)
E
AS
93
mJ
Avalanche current
I
AR
2
A
Repetitive avalanche energy (Note 3)
E
AR
2.5
mJ
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Electrical Characteristics
(Tc =
25°C)
Characteristics
Symbol
Max
Unit
Thermal reverse, channel to case
R
th (ch
c)
5.0
°C / W
Thermal reverse, channel to ambient
R
th (ch
a)
62.5
°C / W
Note 1: Please use devices on condition that the channel temperature is below 150°C.
Note 2: V
DD =
90 V, T
ch
= 25°C (initial), L = 41 mH, R
G
= 25
, I
AR
= 2 A
Note 3: Repetitive rating; Pulse width limited by maximum channel temperature.
This transistor is an electrostatic sensitive device. Please handle with caution.
Unit: mm
JEDEC
—
JEITA
SC-67
TOSHIBA
2-10R1B
Weight: 1.9 g (typ.)
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相關代理商/技術參數 |
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|---|---|
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