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參數資料
| 型號： | 2SK3077A |
| 廠商： | Toshiba Corporation |
| 英文描述： | VHF/UHF Band Amplifier Applications |
| 中文描述： | 甚高頻/超高頻波段放大器應用 |
| 文件頁數： | 1/5頁 |
| 文件大小： | 113K |
| 代理商： | 2SK3077A |
2SK3077A
2002-01-09
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
2SK3077A
VHF/UHF Band Amplifier Applications
Output power: P
o
≥
20.5dBmW
Gain: G
p
≥
1
0.5dB
Drain Efficiency:
η
D
≥
50%
Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-source voltage
V
DSS
10
V
Gate-source voltage
V
GSS
5
V
Drain current
I
D
0.1
A
Power dissipation
P
D
0.1
W
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
45~150
°C
Marking
Electrical Characteristics
(Ta = 25°C)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Output power
P
O
20.5
dBmW
Drain efficiency
η
D
50
%
Power gain
G
P
V
DS
= 4.5 V, Iidle = 20 mA
(V
GS
= adjust)
f = 470 MHz, P
i
= 10dBmW
10.5
dB
Threshold voltage
V
th
V
DS
= 4.8 V, I
D
= 0.5 mA
0.25
1.25
V
Drain cut-off current
I
DSS
V
DS
= 10 V, V
GS
= 0 V
10
μA
Gate-source leakage current
I
GSS
V
GS
= 5 V, V
DS
= 0 V
5
μA
Load mismatch
(Note 1)
V
DS
= 6.5 V, f = 470 MHz,
P
i
= 10dBmW,
P
o
= 20.5dBmW (V
GS
= adjust)
VSWR LOAD 10:1 all phase
No degradation
Caution: This transistor is the electrostatic sensitive device. Please handle with caution.
Note 1: When the RF output power test fixture is used
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2K1D
4
W A
3
1
2
1, 3 Source
2
Gate
4
Drain
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