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參數資料
| 型號： | 2SK3077 |
| 廠商： | Toshiba Corporation |
| 英文描述： | 900 MHz BAND AMPLIFIER APPLICATIONS |
| 中文描述： | 900兆赫波段放大器應用 |
| 文件頁數： | 1/4頁 |
| 文件大小： | 111K |
| 代理商： | 2SK3077 |
2SK3077
2001-12-26
1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3077
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Output Power
: P
O
= 15.0 dBmW (Min.)
Gain
: G
P
= 15.0 dB (Min.)
Drain Efficiency
:
η
D
= 20% (Typ.)
MAXIMUM RATINGS
(Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
V
DSS
10
V
Gate-Source Voltage
V
GSS
5
V
Drain Current
I
D
0.1
A
Power Dissipation
P
D*
0.1
W
Channel Temperature
T
ch
150
°C
Storage Temperature Range
T
stg
45~150
°C
*:
Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
MARKING
Unit: mm
JEDEC
JEITA
TOSHIBA
—
—
2
2K1D
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相關代理商/技術參數 |
參數描述 |
|---|---|
| 2SK3077_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:SILICON N CHANNEL MOS TYPE 900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3077A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:VHF/UHF Band Amplifier Applications |
| 2SK3078 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:900 MHz BAND AMPLIFIER APPLICATIONS (GSM) |
| 2SK3078A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 2SK3078A(TE12L,F) | 制造商:Toshiba 功能描述:Trans MOSFET N-CH 10V 0.5A 4-Pin (3+Tab) PW-Mini T/R |
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