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參數資料
| 型號： | 2SK3079 |
| 元件分類： | 功率晶體管 |
| 英文描述： | UHF BAND, Si, N-CHANNEL, RF POWER, MOSFET |
| 封裝： | 2-5N1A, 4 PIN |
| 文件頁數： | 1/3頁 |
| 文件大小： | 110K |
| 代理商： | 2SK3079 |
2SK3079
2001-11-20
1
TOSHIBA FIELD EFFECT TRANSISTOR SILICON N CHANNEL MOS TYPE
2SK3079
900 MHz BAND AMPLIFIER APPLICATIONS (GSM)
Output Power
: PO = 33.0dBmW (Min)
Gain
: GP = 7.0dB (Min)
Drain Efficiency
: ηD = 40% (Min)
MAXIMUM RATINGS (Ta = 25°C)
CHARACTERISTIC
SYMBOL
RATING
UNIT
Drain-Source Voltage
VDSS
10
V
Gate-Source Voltage
VGSS
5
V
Drain Current
ID
5
A
Power Dissipation
PD*
20.0
W
Channel Temperature
Tch
150
°C
Storage Temperature Range
Tstg
45~150
°C
*:
Tc = 25°C When mounted on a 1.6 mm glass epoxy PCB
MARKING
JEDEC
—
JEITA
—
TOSHIBA
25N1A
Unit: mm
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相關代理商/技術參數 |
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| 2SK3079A | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
| 2SK3079A_07 | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Silicon N Channel MOS Type 470 MHz Band Amplifier Applications |
| 2SK3079ATE12LQ | 制造商:Toshiba America Electronic Components 功能描述:MOSF RF N CH 10V PW-X |
| 2SK308 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 120V V(BR)DSS | 10A I(D) | TO-3 |
| 2SK3080 | 制造商:HITACHI 制造商全稱:Hitachi Semiconductor 功能描述:Silicon N Channel MOS FET High Speed Power Switching |
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