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參數資料
| 型號： | 2SK3102-01R |
| 廠商： | FUJI ELECTRIC CO LTD |
| 元件分類： | JFETs |
| 英文描述： | 10 A, 600 V, 1 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | TO-3PF, 3 PIN |
| 文件頁數： | 1/4頁 |
| 文件大小： | 292K |
| 代理商： | 2SK3102-01R |
1
TO-3PF
Item
Symbol
Rating
Unit
Remarks
Drain-source voltage
VDS
600
Continuous drain current
ID
±10
Pulsed drain current
ID[puls]
±36
Gate-source peak voltage
VGS
±35
Repetitive or non-repetitive
IAR
10
Maximum avalanche energy
EAV
433.7
Maximum power dissipation
PD
80
Operating and storage
Tch
+150
temperature range
Tstg
2SK3102-01R
FUJI POWER MOSFET
N-CHANNEL SILICON POWER MOSFET
Equivalent circuit schematic
Maximum ratings and characteristics
Absolute maximum ratings (Tc=25°C unless otherwise specified)
V
A
V
A
mJ
W
°C
-55 to +150
FAP-IIS SERIES
Electrical characteristics (Tc =25°C unless otherwise specified)
Thermal characteristics
Item
Symbol
Zero gate voltage drain current
IDSS
Min.
Typ.
Max.
Units
V
A
mA
nA
S
pF
ns
A
V
ns
C
Min.
Typ.
Max.
Units
Thermal resistance
Rth(ch-c)
Rth(ch-a)
1.56
30.0
°C/W
Symbol
V(BR)DSS
VGS(th)
IGSS
RDS(on)
gfs
Ciss
Coss
Crss
td(on)
tr
td(off)
tf
IAV
VSD
trr
Qrr
Test Conditions
ID=1mA
VGS=0V
ID=1mA
VDS=VGS
VDS=600V
VGS=0V
Tch=25°C
Tch=125°C
VGS=±30V VDS=0V
ID=5A
VGS=10V
ID=5A
VDS=25V
VGS=0V
f=1MHz
VCC=300V RG=10
ID=10A
VGS=10V
L=1.19mH
Tch=25°C
IF=2xIDR VGS=0V Tch=25°C
IF=IDR VGS=0V
-di/dt=100A/
s Tch=25°C
600
3.5
4.0
4.5
10
500
0.2
1.0
10
100
0.85
1.0
3.0
6.0
1100
1700
170
260
75
120
25
40
70
110
75
120
40
60
10
1.0
1.5
500
6.5
Gate(G)
Source(S)
Drain(D)
Outline Drawings
Features
High speed switching
Low on-resistance
No secondary breakdown
Low driving power
Avalanche-proof
Applications
Switching regulators
DC-DC converters
General purpose power amplifier
www.fujielectric.co.jp/fdt/scd
*1 L=7.95mH, Vcc=60V
Item
Drain-source breakdown voltage
Gate threshold voltage
Gate-source leakage current
Drain-source on-state resistance
Forward transconductance
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on time
Turn-off time
Avalanche capability
Diode forward on-voltage
Reverse recovery time
Reverse recovery charge
Tch 150°C
*1
200509
=
<
s@í
Not
recommend
for
new
design.
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